采用直流磁控溅射法制备Al和Sb交替层,在真空环境下进行高温退火后得到了AlSb多晶薄膜. 通过X射线衍射（XRD）、霍尔效应、暗电导率温度关系以及透反射光谱研究了薄膜的结构、电学和光学性质. 结果表明,退火后形成的AlSb多晶薄膜呈立方相,沿（111）择优取向,且导电类型是P型,载流子浓度为1019cm-3,吸收系数在可见光波段大于104cm-1. 样品在580℃退火后,间接跃迁光能隙为1.64eV,且升温电导激活能为0.01eV和0.11eV. 此方法制备的AlSb多晶薄膜应用于TCO/CdS/AlSb/ZnTe:Cu/Au结构的太阳能电池中, 得到了107mV的开路电压.
The metallic films of Al and Sb were deposited alternately on quartz glass substrates by magnetron sputtering method and then annealed at hightemperature in vacuum to obtain AlSb polycrystalline. The structural, electrical and optical properties of the films before and after annealing were studied with X-ray diffraction (XRD), Hall effect, the temperature dependence of the dark conductivity and UV-Vis transmission and reflection spectra. XRD results show that AlSb multilayers transform to AlSb polycrystalline cubic phase films with preferred orientation in (111) direction. The measurement results indicate that the annealed AlSb films are Ptype semiconductor with the carrier density of 1019cm-3 and the absorption coefficient is higher than 104cm-1 in the visible light. After annealed at 580℃, the indirect energy band-gap of the AlSb film is about 1.64eV. During the temperature increasing process, the conductivity activation energy Ea is 0.01 and 0.11eV. The open circuit voltage of 107mV is achieved in TCO/CdS/AlSb/ZnTe:Cu/Au devices, which demonstrates the potential of AlSb as the absorber layer in solar cells.
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