以MTS/H2为前驱物, 采用强制脉冲CVI(FP-CVI)方法, 进行了在C纤维表面沉积SiC涂层的研究, 并探讨了其工艺过程. 结果表明, 在1000～1100℃和(5～25)kPa, 沉积得到的\beta-SiC具有明显的(111)面取向, 涂层均匀一致, 厚度可控. 在实验过程中, 随着单次驻留时间和脉冲次数的增加, 涂层厚度也随之增加, 涂层厚度与脉冲次数成非线性关系. 当脉冲次数为300时, C纤维表面沉积SiC层后其质量增加达到36.18%.
A SiC coating was derived from a gaseous methyltrichlorosilane (MTS)/H2 precursor by forced pressure-pulsed CVI (FP-CVI) process at low temperatures and reduced pressure. In the present experiment, the FP-CVI
process was studied, and the correlation between the coating thickness and the depositing conditions, i.e. the deposition temperature, the pressure, the deposition time per pulse and the pulse number was investigated. In 1000--1100℃and (5--25)kPa, the homogeneous β-SiC coating synthesized has (111) orientation. The coating thickness increases as the holding time per pulse and the pulse number increase. It shows a nonlinear behavior between the coating thickness and the pulse number. When the pulse number reaches 300 in all, the mass increment is 36.18% after coating on the carbon fiber.
[1] Christin F. Int. J. Appl. Ceram. Technol., 2005, 2 (2): 97--104.
[2] Naslain R. Int. J. Appl. Ceram. Technol., 2005, 2 (2): 75--84.
[3] 高朋召, 王红洁, 金志浩(Gao Peng-Zhao, et al). 无机材料学报(Journal of Inorganic Materials), 2005, 20 (2): 323--331.
[4] Warren R. Ceramic-matrix composites, 1st edition. New York: Chapman and Hall, 1992. 202--208.
[5] Naslain R, Langlais F, Pailler R, et al. Ceram. Trans., 2002, 144: 19--37.
[6] Naslain R. Key. Eng. Mater., 1999, 164-165: 3--8.
[7] Naslain R, Pailler R, Bourrat X, et al. Key. Eng. Mater., 1999, 159-160: 359--366.
[8] http://www.torayca.com/properties/jp/images/report01_2.html.
[9] 宋麦丽, 邹武, 王涛, 等. 宇航材料工艺, 2001, 1: 24--28.
[10] Loumagne F, Langlais F, Naslain R, et al. J. Crystal Growth, 1995, 155 (3-4): 205--213.
[11] Loumagne F, Langlais F, Naslain R, et al. Thin Solid Films, 1995, 254 (1-2): 75--82.
[12] Xu Y, Cheng L, Zhang L, et al. Ceram. Int., 2001, 27 (5): 565--570.
[13] Itoh K, Imuta M, Sakai A, et al. J. Mater. Sci., 1992, 27: 6022--6028.
[14] Sugiyama K, Ohzawa Y. J. Mater. Sci., 1990, 25: 4511--4517.
[15] Xu Y, Cheng L, Zhang L. Carbon, 1999, 37 (8): 1179--1187.
[16] F eron O, Langlais F, Naslain R, et al. Carbon, 1999, 37 (9): 1343--1353.
