不同过饱和度下DKDP晶体生长和缺陷的研究
Growth and Defect of DKDP Crystal at Different Supersaturation
Received date: 2005-08-31
Revised date: 2005-12-25
Online published: 2006-09-20
王 波 , 房昌水 , 孙 洵 , 王圣来 , 顾庆天 , 李毅平 . 不同过饱和度下DKDP晶体生长和缺陷的研究[J]. 无机材料学报, 2006 , 21(5) : 1047 -1052 . DOI: 10.3724/SP.J.1077.2006.01047
During the process of DKDP crystal growth, supersaturation is the dominating factor which greatly influence the growth and quality of DKDP single crystal. In this paper, DKDP crystal was grown from 75%-deuterated solution by the “point-seed” rapid growth method at different supersaturation. Some specimens of the crystal obtained were tested by synchrotron radiation white beam and XRD. The growth and defects of DKDP crstal at different supersaturation were studied. The results show that DKDP crystal can be grown repidly when the supersaturation is at less than, and the defects will become more and more with the increase of supersaturation.
Key words: DKDP crystal; supersaturation; crystal growth; defect
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