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2006 , Vol. 21 >Issue 5: 1230 - 1236

DOI: https://doi.org/10.3724/SP.J.1077.2006.01230

研究论文

飞秒脉冲激光沉积 Si基α轴择优取向的钛酸铋铁电薄膜及I-V特性研究

  • 周幼华 ,
  • 郑启光 ,
  • 杨光 ,
  • 龙华 ,
  • 陆培祥
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  • 1. 华中科技大学激光技术国家重点实验室, 武汉 430074; 2. 江汉大学物理与信息工程学院, 武汉 430056

收稿日期: 2005-10-10

  修回日期: 2006-01-13

  网络出版日期: 2006-09-20

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α-axis Oriented Bi4Ti3O12 Thin Films Deposited on Si(111) by Femtosecond Laser Ablation and Its Characteristic of I-V Curve

  • ZHOU You-Hua ,
  • ZHENG Qi-Guang ,
  • YANG Guang ,
  • LONG Hua ,
  • LU Pei-Xiang
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  • 1. State Key Laboratory of Laser Technology, Huazhong University of Science and Technology, Wuhan 430074, China, 2. Physics & Information School of Jianghan University, Wuhan 430056, China

Received date: 2005-10-10

  Revised date: 2006-01-13

  Online published: 2006-09-20

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摘要

采用飞秒脉冲激光沉积系统, 在Si(111)衬底上制备了a轴和c轴择优取向的Bi4Ti3O12薄膜. X
射线衍射(XRD)表明:室温(20℃)下沉积的Bi4Ti3O12/Si(111)薄膜呈c轴择优取向, 晶粒的平均直径为20nm. 在500℃沉积的Bi4Ti3O12/Si(111)薄膜呈a轴择优取向. 测量了薄膜的电滞回线和I-V特性曲线, 并用分布参数电路研究了Bi4Ti3O12薄膜的I-V特性曲线和铁电性的关联性. a轴择优取向Bi4Ti3O12薄膜的剩余极化强度Pr=15μC/cm2, 矫顽力Ec=48kV/cm.

关键词： 飞秒; 脉冲激光沉积法(PLD); 钛酸铋; 铁电薄膜

本文引用格式

周幼华 , 郑启光 , 杨光 , 龙华 , 陆培祥 . 飞秒脉冲激光沉积 Si基α轴择优取向的钛酸铋铁电薄膜及I-V特性研究[J]. 无机材料学报, 2006 , 21(5) : 1230 -1236 . DOI: 10.3724/SP.J.1077.2006.01230

Abstract

The polycrystalline Bi4Ti3O12 thin films were successfully prepared by femtosecond laser deposition on Si(111) wafers. X-ray diffraction (XRD) showed that Bi4Ti3O12 thin film was highly c-axis-oriented deposited at room temperature (20℃), but the film was highly a-axis-oriented deposited at 500circC. The remanent polarization (P r) and coercive force (Ec) of a-axis-oriented samples were measured to be 15μC/cm2 and 48kV/cm respectiovely. An equivalent circuit with distributed constants of Bi4Ti3O12/Si was introduced to interpret the relationship between the I-V characteristic curve and the ferroelectric hysteresis loop of Bi4Ti3O12 deposited on Si.

Key words： femtosecond; pulsed laser deposition; Bi4Ti3O12; ferroelectric

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