第三代半导体互连材料与低温烧结纳米铜材的研究进展
收稿日期: 2023-08-01
修回日期: 2023-10-12
网络出版日期: 2023-11-22
基金资助
科技部国家重点研发计划(2018YFE0204600);重庆市技术创新与应用发展专项重点项目(CSTB2022TIAD-KPX0027)
Progress of Interconnect Materials in the Third-generation Semiconductor and Their Low-temperature Sintering of Copper Nanoparticles
Received date: 2023-08-01
Revised date: 2023-10-12
Online published: 2023-11-22
Supported by
National Key R&D Program of the Ministry of Science and Technology(2018YFE0204600);Special Key Project for Technological Innovation and Application Development in Chongqing(CSTB2022TIAD-KPX0027)
半导体材料是现代科技发展和产业革新的核心, 随着高频、高压、高温、高功率等工况的日趋严峻及“双碳”目标的需要, 以新型碳化硅(SiC)和氮化镓(GaN)等为代表的第三代半导体材料逐步进入工业应用。半导体产业的贯通以及市场规模的快速扩大, 导致摩尔定律正逐渐达到极限, 先进封装互连将成为半导体行业关注的焦点。第三代半导体封装互连材料有高温焊料、瞬态液相键合材料、导电胶、低温烧结纳米Ag/Cu等几个发展方向, 其中纳米Cu因其优异的导电导热性、低温烧结特性和良好的可加工性成为一种封装互连的新型方案, 具有低成本、高可靠性和可扩展性, 近年来从材料研究向产业链终端应用贯通的趋势非常明显。本文首先介绍了半导体材料的发展概况并总结了第三代半导体封装互连材料类别; 然后结合近期研究成果进一步围绕纳米Cu低温烧结在封装互连等电子领域中的应用进行重点阐述, 主要包括纳米铜粉的粒度、形貌、表面处理和烧结工艺对纳米铜烧结体导电性能和剪切性能的影响; 最后总结了目前纳米铜在应用转化中面临的困境和亟待解决的难点, 并展望了未来的发展方向, 以期为低温烧结纳米铜领域的研究提供参考。
柯鑫 , 谢炳卿 , 王忠 , 张敬国 , 王建伟 , 李占荣 , 贺会军 , 汪礼敏 . 第三代半导体互连材料与低温烧结纳米铜材的研究进展[J]. 无机材料学报, 2024 , 39(1) : 17 -31 . DOI: 10.15541/jim20230345
Semiconductor materials are the core of modern technology development and industrial innovation, with high frequency, high pressure, high temperature, high power, and other high properties under severe conditions or super properties needed by the “double carbon” goal, the new silicon carbide (SiC) and gallium nitride (GaN) as representative of the third generation of semiconductor materials gradually into industrial applications. For the third-generation semiconductor, there are several development directions in its packaging interconnection materials, including high-temperature solder, transient liquid phase bonding materials, conductive adhesives, and low-temperature sintered nano-Ag/Cu, of which nano-Cu, due to its excellent thermal conductivity, low-temperature sintering characteristics, and good processability, has become a new scheme for packaging interconnection, with low cost, high reliability, and scalability. Recently, the trend from material research to industrial chain end-use is pronounced. This review firstly introduces the development overview of semiconductor materials and summarizes the categories of third-generation semiconductor packaging interconnect materials. Then, combined with recent research results, it further focuses on the application of nano-Cu low-temperature sintering in electronic fields such as packaging and interconnection, mainly including the impact of particle size and morphology, surface treatment, and sintering process on the impact of nano-Cu sintered body conductivity and shear properties. Finally, it summarizes the current dilemmas and the difficulties, looking forward to the future development. This review provides a reference for the research on low-temperature sintered copper nanoparticles in the field of interconnect materials for the third-generation semiconductor.
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