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2014 , Vol. 29 >Issue 12: 1233 - 1240

DOI: https://doi.org/10.15541/jim20140110

扫描透射电子显微镜(STEM)在新一代高K栅介质材料的应用

  • 朱信华 ,
  • 李爱东 ,
  • 刘治国
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  • (南京大学1. 物理学院, 固体微结构物理国家重点实验室; 2. 材料科学与工程系, 南京 210093)

收稿日期: 2014-03-10

  修回日期: 2014-04-15

  网络出版日期: 2014-11-20

基金资助

国家科技部重大专项(2009ZX02101-4);国家自然科学基金(11174122, 11134004)

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Applications of Scanning Transmission Electron Microscopy (STEM) in the New Generation of High-K Gate Dielectrics

  • Xin-Hua ZHU ,
  • Ai-Dong LI ,
  • Zhi-Guo LIU
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  • (1. National Laboratory of Solid State Microstructures, School of Physics, Nanjing University,Nanjing 210093, China; 2. National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China)

Received date: 2014-03-10

  Revised date: 2014-04-15

  Online published: 2014-11-20

Supported by

Key Special Program of the Ministry of Science and Technology, China (2009ZX02101-4);National Natural Science Foundation of China (11174122, 11134004)

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摘要

扫描透射电子显微镜(STEM)原子序数衬度像(Z-衬度像)具有分辨率高(可直接“观察”到晶体中原子的真实位置)、对化学组成敏感以及图像直观易解释等优点, 成为原子尺度研究材料微结构的强有力工具。本文介绍了STEM Z-衬度像成像原理、方法及技术特点, 并结合具体的高K栅介质材料 (如铪基金属氧化物、稀土金属氧化物和钙钛矿结构外延氧化物薄膜)对STEM在新一代高K栅介质材料研究中的应用进行了评述。 目前球差校正STEM Z-衬度的像空间分辨率已达亚埃级, 该技术在高K柵介质与半导体之间的界面微结构表征方面具有十分重要的应用。对此, 本文亦进行了介绍。

关键词： 扫描透射电子显微镜; Z-衬度STEM像; 高K柵介质材料; 界面微结构; 综述

本文引用格式

朱信华 , 李爱东 , 刘治国 . 扫描透射电子显微镜(STEM)在新一代高K栅介质材料的应用[J]. 无机材料学报, 2014 , 29(12) : 1233 -1240 . DOI: 10.15541/jim20140110

Abstract

Scanning transmission electron microscopy (STEM) Z-contrast image has some advantages such as high image resolution (directly revealing the real positions of atoms in crystal), high compositional sensitivity and directly interpretable images, it becomes a powerful tool for investigating the microstructure of materials at atomic scale. In this review, the formation mechanisms, methods and features of the Z-contrast STEM images are introduced, and its applications in the new generation of high-k gate dielectrics (e.g., Hf-based metals oxides, rare-earth oxides and epitaxial perovskite oxides) are also reviewed. After aberration-correction the spatial resolution of the Z-contrast STEM images is as high as the sub-Å level, this technique is invaluable for characterizing the interfacial structures between high-K gate dielectrics and semiconductors. The related results are also introduced.

Key words： scanning transmission electron microscopy (STEM); Z-contrast STEM images; high-K gate dielectrics; interfacial microstructures; review

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