高频大功率金刚石薄膜场效应管的研究进展
Progress of High Frequency and High Output Power FET
Received date: 2010-02-15
Revised date: 2010-04-12
Online published: 2010-08-25
刘金龙, 李成明, 陈良贤, 黑立富, 吕反修 . 高频大功率金刚石薄膜场效应管的研究进展[J]. 无机材料学报, 2010 , 25(9) : 897 -905 . DOI: 10.3724/SP.J.1077.2010.00897
Diamond films have been paid much attention in high frequency and high output power field, especially in field effect transistors (FET) with its outstanding electrical properties in the last two decades. For optimum electronics performance, quality of electronic films, good contacts and forming semiconductors are key techniques to make FETs. How to reduce gate length and various parasitic parameters and improve withstand voltage and heat-sinking capability determines whether FETs are of high-performance. The breakouts of key techniques, research progress and related hot spots of diamond films for high frequency and high output power FETs are reviewed. Mechanisms proposed to explain electrical conductivity of H-terminated diamonds are also presented.
Key words： diamond film; high frequency; high output power; FET; review
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