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2010 , Vol. 25 >Issue 4: 386 - 390

DOI: https://doi.org/10.3724/SP.J.1077.2010.00386

研究论文

沉积温度对高Al含量的AlxGa1-xN薄膜的影响

  • 季振国 ,
  • 娄 垚 ,
  • 毛启楠
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  • 1. 杭州电子科技大学 电子信息学院, 杭州 310018; 2. 浙江大学 硅材料国家重点实验室, 杭州 310027

收稿日期: 2009-06-25

  修回日期: 2009-11-02

  网络出版日期: 2010-04-27

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Effects of Growth Temperature on AlxGa1-xN Thin Films on Sapphire with High Al Contents

  • JI Zhen-Guo ,
  • LOU Yao ,
  • MAO Qi-Nan
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  • 1. Institute of Electronic Information, Hangzhou Dianzi University, Hangzhou 310018, China; 2. State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou 310027, China

Received date: 2009-06-25

  Revised date: 2009-11-02

  Online published: 2010-04-27

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摘要

沉积参数对MOCVD法生长的AlxGa1-xN薄膜性能有很大的影响.利用高分辨XRD, 紫外－可见透射光谱, 原子力显微镜, 扫描电子显微镜和荧光光谱研究了沉积温度对低压MOCVD沉积的高Al含量的AlxGa1-xN外延膜缺陷密度以及发光性能的影响. 结果发现, 随着沉积温度的升高, AlxGa1-xN薄膜中的螺型位错密度减少, 但是刃型位错密度增加, 因此简单地改变沉积温度并不能降低总的位错密度以及提高薄膜的发光性能. 进一步地分析测试结果表明, 随着沉积温度的升高, AlxGa1-xN薄膜内的Al含量增加, 导致禁带宽度增大和发光波长的蓝移, 因此适当提高沉积温度（1000～1050℃）是获得高Al含量AlxGa1-xN薄膜的一种有效手段, 但是过高的沉积温度（>1100℃）不利于提高薄膜的发光强度.

关键词： AlGaN; 高铝含量; MOCVD; 外延; 沉积温度

本文引用格式

季振国 , 娄 垚 , 毛启楠 . 沉积温度对高Al含量的AlxGa1-xN薄膜的影响[J]. 无机材料学报, 2010 , 25(4) : 386 -390 . DOI: 10.3724/SP.J.1077.2010.00386

Abstract

Deposition parameters are important to the characteristics of the AlxGa1-xNfilms. Effects of the deposition temperature on the defects densities and the photoluminescence of the AlxGa1-xN films with high Al content were investigated, which is deposited by low pressure MOCVD on sapphire. High resolution XRD, UVVisible transmittance, AFM, SEM, and photoluminescence spectroscope were used to characterize the AlxGa1-xN films with high Al content. It is found that as the growth temperature increases, the screw dislocation density in AlxGa1-xN films increases, while the edge dislocation density decreases. So simply increasing deposition temperature is not a good way to reduce the total defects density or enhance the photoluminescence of the high Al content AlxGa1-xN films. Further analysis shows that higher deposition temperature is beneficial to achieve high Al content AlxGa1-xN films. It’s found that as the deposition temperature increases, Al content in AlxGa1-xN films also increases, which results in the increase of the bandgap of the films. Therefore, moderately increasing the deposition temperature （1000-1050℃）is an effective way to increase Al content in AlxGa1-xN films. Nevertheless, too higher deposition temperature （>1100℃） is detrimental for the photoluminescence of the AlxGa1-xN films.

Key words： AlGaN; high Al content; MOCVD; epitaxy; deposition temperature

参考文献

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