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2010 , Vol. 15 >Issue 2: 151 - 156

DOI: https://doi.org/10.3724/SP.J.1077.2010.00151

研究论文

Ti/La0.7Ca0.3MnO3/Pt结构器件中“负”电阻开关特性研究

  • 刘新军 ,
  • 李效民 ,
  • 王 群 ,
  • 杨 蕊 ,
  • 曹 逊 ,
  • 陈立东
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  • (1. 中国科学院 上海硅酸盐研究所 高性能陶瓷和超微结构国家重点实验室, 上海 200050; 2. 中国科学院 研究生院, 北京 100049)

收稿日期: 2009-06-22

  修回日期: 2009-08-27

  网络出版日期: 2010-02-20

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Study on the “Negative” Resistance Switching Properties in
Ti/La0.7Ca0.3MnO3/Pt Sandwiches Devices

  • LIU Xin-Jun ,
  • LI Xiao-Min ,
  • WANG Qun ,
  • YANG Rui ,
  • CAO Xun ,
  • CHEN Li-Dong
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  • (1. State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China; 2. Graduate University of the Chinese Academy of Science, Beijing 100049, China)

Received date: 2009-06-22

  Revised date: 2009-08-27

  Online published: 2010-02-20

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摘要

以Pt/Ti/SiO2/Si为衬底, 制备了具有电阻转变特性的Ti/La0.7Ca0.3MnO3(LCMO)/Pt结构器件. X射线衍射分析表明LCMO薄膜呈纳米晶或非晶态, 扫描电子显微镜及原子力显微镜分析表明LCMO薄膜表面平整、光滑致密. 电学测试结果表明Ti/LCMO/Pt结构具有明显的双极型“负”电阻转变特性, 低电阻态的导电过程为空间电荷限制电流机制, 高电阻态的导电过程为Poole-Frenkel发射机制. 利用氧化还原反应的随机性和TiOx中间层空间分布的不均匀性, 定性地解释了高电阻态的不稳定性以及电流电压曲线上的电流突变现象.

关键词： 脉冲激光沉积法; 电阻开关; 电脉冲诱发电阻转变; 锰氧化物薄膜

本文引用格式

刘新军 , 李效民 , 王 群 , 杨 蕊 , 曹 逊 , 陈立东 . Ti/La0.7Ca0.3MnO3/Pt结构器件中“负”电阻开关特性研究[J]. 无机材料学报, 2010 , 15(2) : 151 -156 . DOI: 10.3724/SP.J.1077.2010.00151

Abstract

The La0.7Ca0.3MnO3 (LCMO) thin films with resistive switching properties were grown on Pt(111)/Ti/SiO2/Si substrates by pulsed laser deposition (PLD). X-ray diffraction (XRD) results show that the films exhibited nanocrystalline or noncrystalline. Scanning electrical microscope (SEM) and atomic force microscope (AFM) were employed to characterize the morphology of as-grown films whose surfaces are flat, smooth and dense. The results of electrical test indicate that the Ti/LCMO/Pt structures show a bipolar ‘negative’ resistive switching behavior. The detailed analysis of currentvoltage (I-V) curves domonstrate that the electrical conduction of the films at low resistance state is controlled by the space charge limited current (SCLC) mechanism, while that at high resistance state is controlled by PooleFrenkel emission (PFE) mechanism. In the continuous I-V sweeping, the value of the high resistance state fluctuates more easily than that of the low resistance state. It is also found that the anomalous changes of current appear in the each I-V scan. All these results can be qualitatively explained by the combination of the randomness of electrochemical reaction and the nonuniformity of TiOx interlayer spatial distribution.

Key words： pulsed laser deposition(PLD); resistive switching behaviors; electric-pulseinduced resistance switching; manganite films

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