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2010 , Vol. 15 >Issue 2: 157 - 162

DOI: https://doi.org/10.3724/SP.J.1077.2010.00157

研究论文

锌硼玻璃掺杂低压ZnO压敏电阻电性能及晶粒生长动力学研究

  • 万 帅 ,
  • 吕文中
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  • (华中科技大学 电子科学与技术系, 武汉 430074)

收稿日期: 2009-06-09

  修回日期: 2009-09-09

  网络出版日期: 2010-02-20

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Electrical Properties and Kinetic of Crystalline Grain Growth of Low-voltage ZnO Varistor Doped with Zn-B Glass

  • WAN Shuai ,
  • Lv Wen-Zhong
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  • (Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China)

Received date: 2009-06-09

  Revised date: 2009-09-09

  Online published: 2010-02-20

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摘要

研究了锌硼玻璃掺杂量对低压ZnO压敏电阻微观结构和电性能的影响. 结果表明, 当掺杂量x=0.1wt%时, 可以得到较好综合性能的ZnO压敏电阻：E1mA＝36.7V/mm, α=30.4, IL=0.1μA. 并应用晶粒生长动力学唯象理论研究了锌硼玻璃掺杂低压ZnO压敏电阻的晶粒生长规律, 探讨了锌硼玻璃掺杂对低压ZnO压敏陶瓷晶粒生长的作用机理. 当烧结温度T≤1000℃时,其晶粒生长动力学指数n≈4.54, 激活能Q≈316.5kJ/mol, 这是由于未熔融的锌硼玻璃通过颗粒阻滞机理阻碍了ZnO压敏陶瓷晶粒的生长; 而当T>1000℃时, 其晶粒生长动力学指数n≈2.92, 激活能Q=187kJ/mol, 这是由于熔融的锌硼玻璃通过液相烧结机理促进了晶粒的生长.

关键词： 锌硼玻璃; 压敏电阻; 电性能; 动力学指数; 激活能

本文引用格式

万 帅 , 吕文中 . 锌硼玻璃掺杂低压ZnO压敏电阻电性能及晶粒生长动力学研究[J]. 无机材料学报, 2010 , 15(2) : 157 -162 . DOI: 10.3724/SP.J.1077.2010.00157

Abstract

The effects of Zn-B glass additive on microstructure and electrical properties of low-voltage ZnO varistor were studied. The results show that ZnO varistor with x=0.1wt% obtains the optimal nonlinear electrical properties: E1mA=36.7V/mm, α=30.4, IL=0.1μA. The grain growth mechanism of low-voltage ZnO varistor doped with Zn-B glass is also investigated in terms of the phenomenological kinetic of crystalline grain growth. Based on the theory, the grain growth kinetic exponent n and apparent activation energy Q are calculated as 4.54 and 316.5kJ/mol for ZnO ceramics varistor sintered at the temperature below 1000℃. The grain growth mechanism is that non-melting Zn-B glass pins the ZnO grain boundaries, which inhibits the grain growth of ZnO varistor. However, n and Q value are 2.92 and 187kJ/mol at the temperature higher than 1000℃. It indicates that melting Zn-B glass wetting the ZnO grain boundaries creates a liquid phase sintering mechanism, which accelerates the grain growth of ZnO varistor.

Key words： Zn-B glass; varistor; electrical properties; kinetic exponent; apparent activation energy

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