研究论文

玻璃基Pt/Pb(Zr 0.4 Ti 0.6 )O3/ITO电容器的结构及物理性能研究

  • 周 阳 ,
  • 程春生 ,
  • 赵敬伟 ,
  • 郑红芳 ,
  • 赵庆勋 ,
  • 彭英才 ,
  • 刘保亭
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  • 1. 河北大学 物理科学与技术学院, 保定 071002; 2. 保定学院, 保定 071000; 3. 河北大学 电子信息工程学院, 保定 071002

收稿日期: 2009-07-14

  修回日期: 2009-10-15

  网络出版日期: 2010-03-20

Investigation of Structural and Physical Properties of Pt/Pb(Zr 0.4 Ti 0.6 )O3/ITO Capacitors Fabricated on Glass Substrate

  • ZHOU Yang ,
  • CHENG Chun-Sheng ,
  • ZHAO Jing-Wei ,
  • ZHENG Hong-Fang ,
  • ZHAO Qing-Xun ,
  • PENG Ying-Cai ,
  • LIU Bao-Ting
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  • 1. College of Physics Science and Technology,Hebei University, Baoding 071002, China; 2. Baoding University, Baoding 071000, China; 3. College of Electronic and Information Engineering, Hebei University, Baoding 071002, China

Received date: 2009-07-14

  Revised date: 2009-10-15

  Online published: 2010-03-20

摘要

采用溶胶凝胶方法在玻璃基ITO电极上制备了Pt/ Pb(Zr 0.4 Ti 0.6 )O3(PZT)/ITO电容器.采用X射线衍射仪、铁电测试仪、分光光度计对其微观结构、电学性能及光学性能进行了测量.结果表明PZT薄膜结晶良好,具有(101)高度择优取向.铁电电容器具有良好的保持特性和抗疲劳特性,具有较大的剩余极化强度和电阻率,5V电压下的剩余极化强度和电阻率分别为41.7μC/cm2和2.5×109Ω·cm;漏电流测量结果表明电压小于0.8V时为欧姆导电机制,当电压大于0.8V时,漏电流满足肖特基发射机制.光学透射谱结果表明在短波范围内,PZT表现出强吸收作用;在长波范围内,PZT表现为强透射,最大透射率达到95%.

本文引用格式

周 阳 , 程春生 , 赵敬伟 , 郑红芳 , 赵庆勋 , 彭英才 , 刘保亭 . 玻璃基Pt/Pb(Zr 0.4 Ti 0.6 )O3/ITO电容器的结构及物理性能研究[J]. 无机材料学报, 2010 , 25(3) : 242 -246 . DOI: 10.3724/SP.J.1077.2010.00242

Abstract

Pt/Pb(Zr0.4Ti0.6)O3 (PZT)/ITO capacitors were fabricated on glass substrate, where PZT film was prepared by solgel method. The structural and physical properties of Pt/PZT/ITO capacitors were investigated. The microstructural, electrical and optical properties of Pt/PZT/ITO capacitors were characterized by Xray diffraction (XRD), ferroelectric tester, UVspectrophotometer, respectively. It is found that PZT is highly (101) oriented and well crystallized. Ferroelectric measurements indicate that Pt/PZT/ITO capacitor, measured at 5V, possesses good ferroelectric properties, such as fatiguefree characteristics, retention characteristics, large remnant polarization (41.7μC/cm2 ) and high resistivity (2.5×109Ω·cm). The analysis of the leakage current mechanism indicates that Pt/PZT/ITO capacitor showes Ohmiclike behaviour at low voltages (<0.8V) and Schottky emission at high voltages (>0.8V). From the optical measurement, stronger absorption in shortwave and stronger transmission in longwave range are observed. The maximum value of transmission reaches 95%.

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