采用磁控溅射法制备了不同V含量的纳米TiO2薄膜，利用SEM、XRD、Raman光谱和UV-vis吸收光谱对V掺杂TiO2薄膜的表面形貌、结晶特性、晶格应力和光吸收性能进行了分析.结果表明，V掺杂可促进TiO2薄膜晶粒的定向生长，得到尺寸分布较均匀的哑铃状晶粒，且可抑制薄膜的晶格膨胀和金红石型晶粒的生成.V掺杂TiO2薄膜处于压应力状态，且应力随V含量增加而增大.V掺杂使导带底向带隙延伸，TiO2薄膜光学带隙变窄，光响应范围从紫外区红移到可见光区域，提高了薄膜对可见光的吸收率.
V-doped nano-TiO2 thin films with different V-dopings were prepared by magnetron sputtering method. The microstructure observation and crystallization mechanism of the films were performed by scanning electron microscope（SEM） and X-ray diffractometer(XRD). Raman spectrum and UV-vis transmittance spectrum of the films were also accomplished by Raman spectrometer and ultraviolet-visible spectrometer. The stress in crystal lattice and photo-absorption property of the films were studied. The results indicate that vanadium dopant in nano-TiO2 thin films can induce the oriented crystallization of TiO2 and form sizable dumbbell-state crystal grains. The addition of vanadium to TiO2 thin films suppresses the expanding of crystal lattice and the generation of rutile. The stress in the V-doped nano-TiO2 films increases with the increase of vanadium content. With the addition of vanadium, the energy level of conduction band of the nano-TiO2 lowers and stretches to bandgap. Thus the bandgap of nano-TiO2 is narrowed down. As a result, the optical absorption edge of the V-doped nano-TiO2 thin films shifts from ultraviolet zone to visible one, enhancing the absorptivity of the films on visible light.
［1］Babelon P, Depuiedt A S, Mostefa-sba H, et al. Thin Solid Films, 1998, 322 (1-2): 63-67.
［2］Li Y, Hagen J, Schaffrath W. Sol. Energy Mater. Sol. Cells, 1999, 56(2): 167-174.
［3］Watanabe T, Nakajima A, Wang R, et al. Thin Solid Films, 1999, 351 (1-2): 260-263.
［4］秦 纬，刘建军，左胜利，等（QIN Wei，et al）. 无机材料学报（Journal of Inorganic Materials)，2007，22 (5): 932-936.
［5］何 静，江伟辉，于 云，等(HE Jing，et al). 无机材料学报(Journal of Inorganic Materials)，2005，20(3): 713-719.
［6］Wanga Y, Doren D. Solid State Commun., 2005, 136 (3): 142-146.
［7］Kaczmarek D, Domaradzki J, Borkowska A. Thin Solid Films, 2007, 515 (16): 6347-6349.
［8］Alessandri I, Comini E, Bontempi E. Sensors Actuators B, 2005, 109 (1): 47-51.
［9］Gracia F, Holgado J P, Contreras L, et al. Thin Solid Films, 2003, 429 (1-2): 84-90.
［10］潘海波，林德娟，刘隆兴，等. 材料研究学报，2001，15 (5): 535-539.
［11］孙晓君，井里强，蔡伟民，等. 硅酸盐学报，2002，30 (增刊): 26-30.
［12］Yu J C, Yu J G, Ho W K, et al. Chem. Mater., 2002, 14 (9): 3808-3816.
［13］Ohsaka T, Izumi F, Fujiki Y. J. Raman Spectrosc., 1978, 7 (6): 321-324.
［14］王智民，李 丽，刘静波，等. 化学学报，2005，63(1): 81-85.
［15］方容川. 固体光谱学，第一版. 合肥：中国科学技术大学出版社, 2001: 320-323.［16］陈喜明，蒋 新. 浙江大学学报（工学版），2006，40(1): 145-148.
［17］Depero E. J. Solid State Chem., 1993, 104(2): 470-475.
［18］Depero E, Paolo Bonzi, Mirella Musci, et al. J. Solid State Chem., 1994, 111(2): 247-252.
［19］赖发春，林丽梅，瞿 燕. 光子学报，2006，35(10): 1551-1554.
［20］李 丹，何愿华，柳清菊. 大学物理，2005，24(7): 36-39.
