借助DSC、XRD、SEM和TEM等技术探讨了Si-Al-Zr-O(SAZ)系非晶的原位受控晶化过程. 结果表明, SAZ系非晶在900℃左右存在分相, 形成富Si区和富Zr、Al区. 在920~950℃间, 开始成核析出初晶相四方氧化锆, 并从富Al区形成Al-Si尖晶石相. 当温度升高至1000℃时, 莫来石晶相开始生成. 温度进一步升高, Al-Si尖晶石相消失, 四方氧化锆、莫来石成为主晶相, 同时生成了方石英. 其中, 莫来石是通过过渡相Al-Si 尖晶石与非晶二氧化硅反应得到.
The in situ controlled crystallizing process of Si-Al-Zr-O(SAZ) amorphous bulk was investigated by DSC, XRD, SEM and TEM techniques. The amorphous undergoes structural changes by treating at different temperatures. Phase segregation occurs at about 900℃, resulting in the formation of Si-rich and Al, Zr-rich regions. The t-ZrO2 is crystallized from the Al, Zr-rich region at 920--950℃ followed by poorly defined Al-Si spinel. With the increase of temperature up to 1000℃, mullite forms by reaction between Al-Si spinel and amorphous silica. The main crystalline phases identified are t-ZrO2, mullite and some cristobalite with the spinel disappearing above 1000℃.
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