High quality Pb1-xSrxSe (0≤ x≤0.050) thin films were grown on BaF2(111) substrates by using molecular beam epitaxy(MBE). Optical and structural properties of the Pb1-xSrxSe films were studied using transmission spectrum and high resolution X-ray diffraction (HRXRD). HRXRD patterns indicate that Pb1-xSrxSe films has cubic-phase structure, with no SrSe phase separation.
The films orientation is parallel to (111) surface of substrate. The lattice constants of the Pb1-xSrxSe films increase with increasing Sr content. The Sr content can be obtained by using Vegard formula. Sharp absorption edges are observed in the transmission spectrum of Pb1-xSrxSe films. The fundamental band gap of the Pb1-xSrxSe films is attained by simulation. Refractive indexes and absorption coefficients near the fundamental band-gap are obtained by simulation using dielectric function model(DFM).
[1] Krauss T D, Wise F W,Tanner D B. Phys. Rev. Lett., 1996, 76 (8): 1376--1379.
[2] Suzuki N, Sawai K, Adachi S. J. Appl. Phys., 1995, 77 (3): 1249--1255.
[3] Schwarzl T, Hei \beta W, Springholz G. Appl. Phys. Lett., 1999, 75 (9): 1246--1248.
[4] Ma J X, Jia Y, Liang E J, et al. Acta Phys. Sin., 2003, 52 (12): 3155--3161.
[5] 孙 柏, 邹崇文, 刘忠良, 等(SUN Bai, et al). 无机材料学报(Journal of Inorganic Materials), 2006, 21 (4): 1005--1010.
[6] McCann P J, Kamat P, Li Y, et al. J. Appl. Phys., 2005, 97 (5): 053103,1--4.
[7] Zhao F, Wu H, Majumdar A, et al. Appl. Phys. Lett., 2003, 83 (25): 5133--5135.
[8] Felix C L, Bewley W W, Vurgaftman I, et al. Appl. Phys. Lett., 2001, 78 (24): 3770--3772.
[9] Chen J, Shen W Z. J. Appl. Phys, 2006, 99 (1): 013513,1--5.
[10] 周 玉, 武高辉. 材料分析测试技术, 第一版. 哈尔滨: 哈尔滨工业大学出版社, 2000. 26--29.
[11] Shen W Z. Proceeding of SPIE, Bellingham, WA. 2004, 5359: 40--51.
[12] Swanepoel R. J. Phys. E: Sci. Instrum., 1983, 16: 1214--1222.
[13] Teng C W, Muth J F. Appl. Phys. Lett., 2000, 76 (8): 979--981.
[14] Shen W Z, Jiang L F, Yang H F, et al. Appl. Phys. Lett., 2002, 80 (12): 2063--2065.
[15] Aspnes D E, Theeten J B, Hottier F. Phys. Rev. B, 1979, 20 (8): 003292,1--11.
[16] Forouhi A R, Bloomer I. Phys. Rev. B, 1986, 34 (10): 7018--7026.
[17] Jellison G E J r, Modine F A. Appl. Phys. Lett., 1996, 69 (3): 371--373.
[18] Adachi S. J. Appl. Phys., 1990, 68 (3): 1192--1196.
[19] Majumdar A, Xu H Z, Zhao F, et al. J. Appl. Phys., 2004, 95 (3): 939--942.
[20] Yuan S, Krenn H, Springholz G, et al. Phys. Rev. B, 1993, 47 (12): 7213--7225.
[21] Krenn H, Yuan S, Frank N, et al. Phys. Rev. B, 1998, 57 (4): 2393--2401.