采用过滤阴极真空电弧技术, 以高纯磷烷气体为掺杂源制备掺磷四面体非晶碳(ta-C:P)薄膜. 利用X射线光电子能谱和激光拉曼光谱表征薄膜的成分和结构, 采用循环伏安和微分脉冲伏安分析薄膜的电化学行为. 结果表明, 磷的掺入没有引起薄膜非晶结构的明显变化, 只是促进了sp2杂化碳原子的团簇. 经过酸预处理的ta-C:P薄膜在硫酸溶液中有宽的电势窗口和低的背景电流; 对Cl-有催化活性; 薄膜表面电子传输速度快; 对水溶液中Cu2+和Cd2+有检测活性. 因此具有良好导电性的ta-C:P薄膜适于作为电极并有望用于污水中重金属离子的分析检测等领域.
Phosphorus incorporated tetrahedral amorphous carbon (ta-C:P) film was deposited by a filtered cathodic vacuum arc technology with PH3 as the dopant source. The composition and structural characteristics were investigated by X-ray photoelectron spectroscope and Raman spectroscope, and the electrochemical behaviors of ta-C:P film were examined by cyclic voltammetry and differential pulse voltammetry. Results indicate that phosphorus implantation does not remarkably change the amorphous structure of the film but enhances the clustering of sp2 sites dispersed in sp3 skeleton and the evolution of structrual ordering. Ta-C:P film pretreated by acid exhibits a large electrochemical potential window and a low background current in H2SO4 solution, a considerable electrochemical activity toward Cl-, quick electrode response and a high signal for Cu2+ and Cd2+ analysis. These characteristics greatly demonstrate a potential application of conductive ta-C:P film as electrodes for analysis and treatment of trace metal ions in waste water.
[1] Hupert M, Muck A, Wang R, et al. Diamond and Related Materials, 2003, 12 (10-11): 1940--1949.
[2] Compton R G, Foord J S, Marken F. Electroanalysis, 2003, 15 (17): 1349--1363.
[3] Panizza M, Cerisola G. Electrochimica Acta, 2005, 51 (2): 191--199.
[4] Weng J, Xue J M, Wang J, et al. Adv. Funct. Mater., 2005, 15 (4): 639--647.
[5] Robertson J. Mater. Sci. Eng. R, 2002, 37: 129--281.
[6] 陈弟虎, 等(CHEN Di-Hu, { et al). 无机材料学报(Journal of Inorganic Materials), 2000, 15 (1): 179--182.
[7] 蒋娜哪, 等(JIANG Na-Na, { et al). 无机材料学报(Journal of Inorganic Materials), 2005, 20 (1): 187--192.
[8] Yoo K S, Miller B, Kalish R, et al. Electrochem. Solid-State Lett., 1999, 2 (5): 233--235.
[9] Cheah L K, Shi X, Tay B K, et al. Diam. Relat. Mater., 1998, 7 (2-5): 640--644.
[10] Ma Z Q, Liu B X. Sol. Energ. Mat. Sol. C, 2001, 69 (4): 339--344.
[11] Rusop M, Soga T, Jimbo T. Diam. Relat. Mater., 2004, 13 (11-12): 2197--2202.
[12] Pleskov Y V, Evstefeeva Y E, Krotova M D, et al. Diam. Relat. Mater., 1999, 8 (1): 64--72.
[13] Zeng A, Liu E, Tan S N, et al. Eletroanalysis, 2002, 14 (18): 1294--1298.
[14] Lagrini A, Deslouis C, Cachet H, et al. Electrochem. Commun., 2004, 6 (3): 245--248.
[15] Fuge G M, May P W, Rosser K N, et al. Diamond and Related Materials, 2004, 13 (4-8): 1442--1448.
[16] Golzan M M, McKenzie D R, Miller D J, et al. J. Diam. Relat. Mater., 1995, 4: 912--916.
[17] Merel P, Tabbal M, Chaker M, et al. Applied Surface Science, 1998, 136 (1-2): 105--110.
[18] Zhao J F, Lemoine P, Liu Z H, et al. J. Phys. Condens. Matter., 2000, 12 (44): 9201--9213.
[19] Messina G, Paoletti A, Santangelo S, et al. J. Appl. Phys., 2001, 89 (2): 1053--1058.
[20] Tabbal M, Christidis T, Isber S, et al. J. Appl. Phys., 2005, 98 (4): 044310. [21] Ferrari A C, Robertson J. Physical Review B, 2000, 61 (20): 14095--14107.
[22] Claeyssens F, Fuge G M, Allan N L, et al. Dalton. Trans., 2004, 4 (19): 3085--3092.
[23] Veerasamy V S, Amaratunga G A J, Davis C A, et al. J. Phys.: Condens. Matter., 1993, 5: Ll69--L174.
[24] Rusop M, Soga T, Jimbo T. Sol. Energ. Mat. Sol. C, 2006, 90: 291--300.
[25] Zeng A, Liu E, Tan S N, et al. Eletroanalysis, 2002, 14 (15-16): 1110--1115.
[26] Salazar-Banda G R, Andrade L S, Nascente P A P, et al. Electrochimica Acta, 2006, 51: 4612--4619.
