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2009 , Vol. 24 >Issue 5: 1054 - 1058

DOI: https://doi.org/10.3724/SP.J.1077.2009.01054

研究论文

退火对提拉法生长Lu2Si2O7∶Ce晶体闪烁性能的影响

  • 冯 鹤 ,
  • 丁栋舟 ,
  • 李焕英 ,
  • 陆 晟 ,
  • 潘尚可 ,
  • 陈晓峰 ,
  • 张卫东 ,
  • 任国浩
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  • （中国科学院 上海硅酸盐研究所 中试基地, 上海 201800）

收稿日期: 2009-01-15

  修回日期: 2009-03-10

  网络出版日期: 2009-09-20

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Effect of Annealing Treatments on Scintillation Properties of Lu2Si2O7∶Ce Grown by Czochralski Method

  • FENG He ,
  • DING Dong-Zhou ,
  • LI Huan-Ying ,
  • LU Sheng ,
  • PAN Shang-Ke ,
  • CHEN Xiao-Feng ,
  • ZHANG Wei-Dong ,
  • REN Guo-Hao
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  • (R&D Center of Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China)

Received date: 2009-01-15

  Revised date: 2009-03-10

  Online published: 2009-09-20

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摘要

Lu2Si2O7∶Ce (LPS∶Ce)表现出较高的光输出, 平均值约26000photons/MeV (简写为ph/MeV), 但通过提拉法获得的晶体发光效率很低. 实验对LPS∶Ce晶体进行了不同气氛下的退火, 研究退火条件对LPS∶Ce的发光效率等闪烁性能的影响. 发现在Ar气氛下退火对LPS∶Ce发光效率的提高没有作用, 在空气气氛下退火后可显著提高LPS∶Ce的发光效率. 通过不同退火工艺的比较, 确定了提高LPS∶Ce发光效率的最佳退火制度：空气气氛下, 退火温度1400℃, 退火时间根据样品的大小决定, 样品越大, 需要的退火时间越长. 同时讨论了退火过程中, LPS∶Ce吸收谱和UV-ray激发发射谱的变化趋势.

关键词： LPS∶Ce晶体; 退火制度; 发光效率; 吸收谱; 发射光谱

本文引用格式

冯 鹤 , 丁栋舟 , 李焕英 , 陆 晟 , 潘尚可 , 陈晓峰 , 张卫东 , 任国浩 . 退火对提拉法生长Lu2Si2O7∶Ce晶体闪烁性能的影响[J]. 无机材料学报, 2009 , 24(5) : 1054 -1058 . DOI: 10.3724/SP.J.1077.2009.01054

Abstract

Although the Lu2Si2O7∶Ce(LPS∶Ce) has a high light yield about 26000ph/MeV, the LPS∶Ce crystals grown by Czochralski(Cz) process usually display a low light yield. In present work, annealing treatments in different conditions were carried out on Cz grown LPS∶Ce with low luminescence efficiency, in order to investigate the effect of annealing treatment conditions on scintillation properties of LPS∶Ce, such as luminescence efficiency, absorption spectrum. It is found that annealing in argon atmosphere has a negligible effect on the scintillation properties of LPS∶Ce; annealing in air can dramatically improve the luminescence efficiency of LPS∶Ce. The optimized annealing mechanism is determined through the comparison between different annealing treatment: atmosphere of air; annealing temperature of 1400℃; annealing time depending on the dimension of the sample. The larger dimension is the longer annealing time. The change trend of charge transfer band in the absorption spectrum and UV-ray excitation and emission property of LPS∶Ce crystal are also discussed.

Key words： LPS∶Ce crystal; annealing mechanism; luminescence efficiency; absorption spectrum; emission spectrum

参考文献

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