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无机材料学报

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2007 , Vol. 22 >Issue 3: 400 - 402

DOI: https://doi.org/10.3724/SP.J.1077.2007.00400

研究论文

立方 TaN纳米粉的制备

  • 类伟巍 ,
  • 沈龙海 ,
  • 刘丹 ,
  • 李雪飞 ,
  • 彭刚 ,
  • 崔启良 ,
  • 邹广田
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  • 吉林大学超硬材料国家重点实验室, 长春 130012

收稿日期: 2006-06-05

  修回日期: 2006-08-28

  网络出版日期: 2007-05-20

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Synthesis of Cubic Tantalum Nitride Nanocrystallites

  • LEI Wei-Wei ,
  • SHEN Long-Hai ,
  • LIU Dan ,
  • LI Xue-Fei ,
  • PENG Gang ,
  • CUI Qi-Liang ,
  • ZOU Guang-Tian
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  • National Laboratory of Superhard Material, Jilin University, Changchun 130012, China

Received date: 2006-06-05

  Revised date: 2006-08-28

  Online published: 2007-05-20

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摘要

采用直流电弧法使金属钽和氮气直接反应制备出了TaN纳米粉．利用XRD、XPS、TEM等测试方法对所制备的TaN纳米粉进行了表征．结果表明: 所制备的纳米粉为单一的立方相TaN, 纳米颗粒的平均粒度为5~10nm．实验中还发现氮气的气压对制备纯立方相TaN具有关键性作用, 并讨论了立方相TaN的形成机理．

关键词： 立方相TaN; 纳米粉; 直流电弧法

本文引用格式

类伟巍 , 沈龙海 , 刘丹 , 李雪飞 , 彭刚 , 崔启良 , 邹广田 . 立方 TaN纳米粉的制备[J]. 无机材料学报, 2007 , 22(3) : 400 -402 . DOI: 10.3724/SP.J.1077.2007.00400

Abstract

Cubic tantalum nitride (TaN) nanocrystallites were synthesized by the direct-current (dc) arc discharge method in N2 gas. The influence of N2 pressure on the as-synthesized cubic TaN samples was studied. The growth mechanism of cubic TaN was discussed. XRD, TEM and XPS were used to characterize the product. The results show that the influence of N2 pressure plays a key role in the preparation of pure cubic TaN nanocrystallites. The size of cubic TaN nanocrystallites obtained is 5--10nm.

Key words： cubic TaN; nanocrystallites; dc arc discharge method

参考文献

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