无机材料学报

• 研究论文 • 上一篇    下一篇

合成硼碳氮体系薄膜的XPS研究

雷明凯1,2; 袁力江1; 张仲麟1; 马腾才2   

  1. 1. 大连理工大学材料工程系, 大连 116024; 2. 大连理工大学三束材料改性国家重点联合实验室, 大连 116024
  • 收稿日期:1998-10-09 修回日期:1999-01-04 出版日期:1999-08-20 网络出版日期:1999-08-20

XPS Studies of Synthesized B C N Films by Plasma Source Ion Nitriding

LEI Ming-Kai 1; 2, YUAN Li-Jiang 1 ,ZHANG Zhong-Lin 1, MA Teng Cai 2   

  1. 1. Department of Materials Engineering; Dalian University of Technology Dalian 116024 China; 2. National Laboratory of Materials Modification; Dalian University of Technology Dalian 116024 China
  • Received:1998-10-09 Revised:1999-01-04 Published:1999-08-20 Online:1999-08-20

摘要: 采用 X 射线光电子谱( X P S) 分析300 ~500℃ 等离子体源离子渗氮硼和碳化硼薄膜合成的氮化硼和硼碳氮薄膜利用合成薄膜成分可控的特点, 研究 B、 C、 N 对薄膜的 X P S影响结果表明, X P S分析合成氮化硼薄膜能够确定其化学组成, 但不能确定spsp 型键合结构特性; X P S 分析硼碳氮薄膜能够确定其成分和结构特性在较高的工艺温度下, 等离子体源离子渗氮合成的硼碳氮薄膜具有spsp 型复合的键合结构

关键词: 硼碳氮薄膜, 等离子体源离子渗氮, X射线光电子谱

Abstract: The synthesized boron nitride and boron-carbon-nitrogen films by plasma source ion nitriding were analyzed by X-ray photoelectron spectroscopy
(XPS). The effects of boron, carbon and nitrogen elements in the films on the XPS results were studied making use of the film characteristics with the
controllable composition. The XPS revealed that the formation of boron nitride films was confirmed but the sp2 and sp3 plain microdomain structures were difficult distinguished, and the formation and bonding structures of boron-carbon-nitrogen
films could be determined. The synthesized boron-carbon-nitrogen films possessed a mixing structure of sp2 and sp3 plain microdomains
in the processes.

Key words: boron-carbon-nitrogen films, plasma source ion nitriding, X-ray photoelectron spectroscopy

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