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MgxZn1-xO薄膜的结构特性研究

张锡健, 马洪磊, 王卿璞, 马瑾   

  1. 山东大学物理与微电子学院, 济南 250100
  • 收稿日期:2005-01-05 修回日期:2005-02-23 出版日期:2006-01-20 网络出版日期:2006-01-20

Structure Properties of MgxZn1-xO Films

ZHANG Xi-Jian, MA Hong-Lei, WANG Qing-Pu, MA Jin   

  1. School of Physics and Microelectronics, Shandong University, Jinan 250100, China
  • Received:2005-01-05 Revised:2005-02-23 Published:2006-01-20 Online:2006-01-20

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摘要： 采用射频磁控溅射法在80℃衬底温度下制备了MgxZn1-xO(x=0.23)薄膜, 用X射线衍射(XRD)、高分辨透射电镜(HRTEM)、喇曼(Raman)光谱和原子力显微镜(AFM)研究了薄膜的结构特性. XRD和HRTEM分析结果表明MgxZn1-xO薄膜为单相六角纤锌矿结构, 且具有沿c轴的择优取向, 晶格常数与ZnO晶体的近似相等. Raman光谱不仅揭示MgxZn1-xO薄膜具有六角纤锌矿结构, 而且也表明MgxZn1-xO薄膜的结晶质量比在相同条件下制备的ZnO薄膜好. AFM图像则显示出MgxZn1-xO薄膜为多晶结构.

关键词: MgxZn1-xO, 射频磁控溅射, 结构特性

Abstract: MgxZn{1-xO films (x=0.23) were prepared on silicon substrates by radio frequency magnetron sputtering at 80℃. The structure properties of MgxZn1-xO films were
studied by using XRD, HRTEM, Raman spectra and AFM. The analyses of XRD and HRTEM indicate that the MgxZn1-xO films have hexagonal wurtzite
single-phase structure and a preferred orientation with c axis perpendicular to the substrates. The lattice constants of MgxZn1-xO films are similar to those of ZnO films. Raman spectra of ZnO and MgxZn1-xO films reveal
that the MgxZn1-xO films have not only hexagonal wurtzite structure, but also higher crystalline quality than ZnO films. AFM image indicates
that the MgxZn1-xO films are polycrystalline.

Key words: MgxZn1-xO, radio frequency magnetron sputtering, structure properties

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