HFCVD金刚石膜过程的气氛模拟与分析

无机材料学报

HFCVD金刚石膜过程的气氛模拟与分析

戚学贵¹; 陈则韶¹; 常超²; 王冠中²; 廖源²

1. 中国科学技术大学工程科学学院, 合肥 230027; 2. 中国科学技术大学物理系; 合肥 230026

收稿日期:2001-12-04 修回日期:2002-01-07 出版日期:2003-01-20 网络出版日期:2003-01-20

Simulation and Analysis of Gas Phase Environment in HFCVD Diamond Films Growth

QI Xue-Gui¹; CHANG Chao^w; CHEN Ze-Shao¹; WANG Guan-Zhong^w; LIAO Yuan²

1.School of Engineering Science; University of Science and Technology of China; Hefei 230027; China; 2.Department of Physics; University of Science and Technology of China, Hefei 230026; China

Received:2001-12-04 Revised:2002-01-07 Published:2003-01-20 Online:2003-01-20

摘要/Abstract

摘要： 对热丝法化学气相沉积金刚石膜过程的气氛进行了模拟与分析.使用GRI-Mech3.0甲烷燃烧过程C/H/O/N四元体系热化学反应机理和动力学数据,模拟并分析了HFCVD金刚石膜的C/H气相化学反应,通过对反应流的简单模拟得到了衬底位置气相组成,结果与前人实验数据吻合.探讨了灯丝温度、碳源浓度和碳源种类等因素变化对衬底位置气相组成的影响.结果表明甲基是金刚石膜生长最主要的前驱基团,其作用远高于乙炔,而超平衡态原子氢的存在对金刚石膜的质量至关重要.

关键词: 热丝法化学气相沉积, 金刚石膜, 气相化学, 前驱基团

Abstract: The paper simulated and analyzed gas phase environment in diamond films growth by hot filament chemical vapor deposition(HFCVD). GRI-Mech3.0, a detailed thermochemical
reaction mechanism of methane combustion chemistry, was used to simulate C/H gas chemistry in HFCVD diamond films reactors. By simply simulating the reactive flow,
the gas composition at the position of the substrate was obtained, which agrees well with other’s experimental results. The influences of filament temperature,
carbon-contained gas concentration and hydrocarbon precursor gases in feed on gas phase and diamond films growth were discussed. The results suggest that CH₃
other than C₂H₂ is the dominant diamond films growth precursor in HFCVD, while H superequilibrium above substrate is important for good diamond films growth.

Key words: hot filament CVD, diamond films, gas chemistry, growth precursor

中图分类号:

O484

戚学贵,陈则韶,常超,王冠中,廖源. HFCVD金刚石膜过程的气氛模拟与分析[J]. 无机材料学报.

QI Xue-Gui,CHANG Chao,CHEN Ze-Shao,WANG Guan-Zhong,LIAO Yuan. Simulation and Analysis of Gas Phase Environment in HFCVD Diamond Films Growth[J]. Journal of Inorganic Materials.

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