基于MoS2/SiO2范德华异质结的VO2薄膜转移打印研究

doi:10.15541/jim20190023

无机材料学报 ›› 2019, Vol. 34 ›› Issue (11): 1161-1166.DOI: 10.15541/jim20190023 CSTR: 32189.14.10.15541/jim20190023

基于MoS₂/SiO₂范德华异质结的VO₂薄膜转移打印研究

肖敏,孙睿智,李艳芳,康同同,秦俊,杨润,毕磊()

电子科技大学国家电磁辐射控制材料工程技术研究中心, 成都 611731

收稿日期:2019-01-09 修回日期:2019-03-27 出版日期:2019-11-20 网络出版日期:2019-05-29
作者简介:肖敏(1993-), 女, 硕士研究生. E-mail: 201621030622@std.uestc.edu.cn
基金资助:
国家自然科学基金(61475031);国家自然科学基金(51522204);科技部重点研发计划(2016YFA0300802)

Transfer Printing of VO₂Thin Films Using MoS₂/SiO₂ van der Waals Heterojunctions

XIAO Min,SUN Rui-Zhi,LI Yan-Fang,KANG Tong-Tong,QIN Jun,YANG Run,BI Lei()

National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 611731, China

Received:2019-01-09 Revised:2019-03-27 Published:2019-11-20 Online:2019-05-29
Supported by:
National Natural Science Foundation of China(61475031);National Natural Science Foundation of China(51522204);Ministry of Science and Technology of China MOST(2016YFA0300802)

摘要/Abstract

摘要：

近年来, 柔性电子器件由于在物联网、生物电子等领域的潜在应用引起了研究者的广泛关注。功能氧化物材料在柔性聚合物中的集成已被证明是实现高性能柔性电子器件的有效方式。由于功能氧化物薄膜通常需要高温制备, 直接在柔性聚合物基底上合成高质量的氧化物薄膜仍然是一个巨大的挑战。本研究提出了一种基于MoS₂/SiO₂范德华异质结转移打印大面积VO₂薄膜的方法, 即利用MoS₂和SiO₂薄膜亲疏水性能的不同, 可以仅使用去离子水解离MoS₂/SiO₂范德华异质结界面, 成功将Si/SiO₂/MoS₂/SiO₂/VO₂多层膜结构上的VO₂薄膜转印到Si、SiO₂/Si以及柔性基底上。X射线衍射(XRD)结果显示, 转印前后VO₂薄膜的晶体结构没有差异, 变温Raman光谱和变温红外反射光谱证明了转印前后VO₂薄膜良好的金属-绝缘体转变性能。本研究提供了一种有效的功能氧化物薄膜转印方法, 在不引入牺牲层和腐蚀性溶剂的条件下, 实现了VO₂薄膜在任意基底上的低温集成, 为柔性可穿戴电子器件的研制提供了一种新思路。

关键词: 二氧化钒薄膜, 转移打印, 低温集成, 柔性电子器件

Abstract:

In recent years, flexible electronic devices have attracted much attention due to the potential applications in the fields of the Internet of Things and bioelectronics. The integration of functional oxide materials in flexible polymers has been proven an effective way to achieve high performance flexible electronic devices. However, due to high fabrication temperatures, the synthesis of high-quality oxide films directly on flexible polymer substrates remains a significant challenge. This study proposed a method for transferring printing large-area VO₂ film based on MoS₂/SiO₂ van der Waals heterojunctions. Due to different hydrophilic and hydrophobic properties of MoS₂ and SiO₂ films, we can dissociate the MoS₂/SiO₂ van der Waals heterojunction interface only by using deionized water, and transfer printing the VO₂ films from Si/SiO₂/MoS₂/SiO₂/VO₂ to Si, SiO₂/Si and flexible substrates. X-ray diffraction (XRD) results showed that the crystal structure of VO₂ films has no difference before and after the transfer process. Temperature-dependent Raman spectrum and infrared reflectance spectrum demonstrate good metal-insulator transition (MIT) performance of VO₂ films before and after transferring printing. These results indicate an effective method for transferring printing functional oxide films, which enables low-temperature integration of VO₂ thin films on arbitrary substrates without introducing sacrificial layer and corrosive solvents. Our study provides a new way for integrating functional oxides for flexible wearable electronic devices applications.

Key words: vanadium oxide film, transfer printing, low-temperature integration, flexible electronic devices

中图分类号:

O484

肖敏, 孙睿智, 李艳芳, 康同同, 秦俊, 杨润, 毕磊. 基于MoS₂/SiO₂范德华异质结的VO₂薄膜转移打印研究[J]. 无机材料学报, 2019, 34(11): 1161-1166.

XIAO Min, SUN Rui-Zhi, LI Yan-Fang, KANG Tong-Tong, QIN Jun, YANG Run, BI Lei. Transfer Printing of VO₂Thin Films Using MoS₂/SiO₂ van der Waals Heterojunctions[J]. Journal of Inorganic Materials, 2019, 34(11): 1161-1166.

图/表 6

图1 VO2薄膜转印流程示意图

Fig. 1 Schematic illustration of transfer printing process of VO2 film

图2 转印到不同基底上的VO2薄膜的光学显微照片

Fig. 2 Microphotographs of the transferred VO2 films on different substrates (a) Transferred on Si; (b) Transferred on SiO2/Si; (c) Transferred on PDMS; (d) Transferred on PI

图3 转印前样品(a)和转印后原基底(b)的截面形貌图

Fig. 3 Cross-sectional profile (a) before transfer printing and (b) original substrate after transfer printing

图4 转印前后样品的XRD图谱

Fig. 4 XRD patterns of sample before and after transfer printing

图5 转印前后样品的变温Raman谱图

Fig. 5 Temperature dependent Raman spectra before and after transfer printing (a) VO2/SiO2/MoS2/SiO2/Si before transfer printing; (b) Transferred VO2 on SiO2/Si substrate

图6 转印前后样品红外反射率随温度的变化曲线(彩图见pdf)

Fig. 6 Temperature dependent infrared reflectance spectra before and after transfer printing (Colorful edition is available in pdf) (a) VO2/SiO2/MoS2/SiO2/Si before transfer printing; (b) Transferred VO2 on SiO2/Si substrate; (c) SiO2/Si substrate

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基于MoS₂/SiO₂范德华异质结的VO₂薄膜转移打印研究

Transfer Printing of VO₂Thin Films Using MoS₂/SiO₂ van der Waals Heterojunctions

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