AgInSbTe相变薄膜的热刻蚀腐蚀特性

doi:10.3724/SP.J.1077.2012.00620

无机材料学报 ›› 2012, Vol. 27 ›› Issue (6): 620-626.DOI: 10.3724/SP.J.1077.2012.00620 CSTR: 32189.14.SP.J.1077.2012.00620

AgInSbTe相变薄膜的热刻蚀腐蚀特性

李豪^{1, 2}, 耿永友¹, 吴谊群^{1, 3}

(1．中国科学院上海光学精密机械研究所, 上海 201800; 2. 中国科学院研究生院, 北京100039; 3. 黑龙江大学教育部无机功能材料化学重点实验室, 哈尔滨 150080)

收稿日期:2011-07-07 修回日期:2011-08-19 出版日期:2012-06-20 网络出版日期:2012-05-07
作者简介:李豪(1984-), 男, 博士研究生. E-mail: lihao84@siom.ac.cn
基金资助:
中国科学院院地合作项目; 国家973项目(2007CB935402); 国家自然科学基金(50872139; 60977004)

Thermal Etching Characteristics of AgInSbTe Phase Change Film

LI Hao^{1, 2}, GENG Yong-You¹, WU Yi-Qun^{1, 3}

(1. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China; 2. Graduate School of Chinese Academy of Science, Beijing 100039, China; 3. Key Lab of Functional Inorganic Material Chemistry (Heilongjiang University), Ministry of Education, Harbin 150080, China)

Received:2011-07-07 Revised:2011-08-19 Published:2012-06-20 Online:2012-05-07
About author:LI Hao. E-mail: lihao84@siom.ac.cn
Supported by:
Research Fund of Corperation between Academy and Region; 973 Program (2007CB935402); National Natural Science Foundation of China (50872139; 60977004)

摘要/Abstract

摘要： 研究了AgInSbTe相变薄膜作为一种新的热刻蚀材料的腐蚀特性。采用射频磁控溅射的方法在室温下制备了非晶态AgInSbTe薄膜, 经真空加热退火晶化. 以氢氧化钠溶液作为腐蚀剂, 研究了退火温度、腐蚀剂浓度、腐蚀时间对晶态、非晶态 AgInSbTe薄膜腐蚀特性的影响. 结果表明: 以非晶态形式存在的沉积态AgInSbTe薄膜在0.001 mol/L氢氧化钠溶液中腐蚀速度小于0.04 nm/min, 退火晶化后, 薄膜的腐蚀速度大幅度提高, 晶态和非晶态薄膜的腐蚀选择比随退火温度的升高而增大. 当腐蚀时间为20 min时, 经300℃真空退火的晶态AgInSbTe薄膜比相应非晶态的腐蚀速度高45倍以上. 腐蚀后薄膜表面质量良好(粗糙度＜1 nm, 10 μm×10 μm区域). 并对AgInSbTe相变薄膜的腐蚀机理进行了讨论.

关键词: AgInSbTe相变薄膜, 无机热刻蚀材料, 腐蚀特性

Abstract: The etching characteristics of the AgInSbTe phase change film as a new thermal lithography material were studied. The amorphous AgInSbTe film was deposited by using radio frequency magnetron sputtering method at room temperature, and then crystallized by vacuum-annealing. Using sodium hydroxide aqueous solution as etchant, influences of annealing temperature, etchant concentration and etching time on etching properties of the amorphous and crystalline AgInSbTe films were investigated. Experimental results indicate that the etching rate of the amorphous AgInSbTe film is lower than 0.04 nm/s in 0.001 mol/L sodium hydroxide solution. After vacuum-annealing, the etching rate of the film increases markedly and the etching selectivity between the crystalline and amorphous films increases with the increase of the annealing temperature. At the etching time of 20 min, the etching rate of the crystalline AgInSbTe film annealed at 300℃ is 45 times higher than that of the amorphous film. The surface quality of the AgInSbTe film after etching is good, and the surface roughness is less than 1nm in the area of 10 μm×10 μm. The wet-etching mechanism of the AgInSbTe film in sodium hydroxide solution is discussed.

Key words: AgInSbTe phase change film, inorganic thermal lithography material, etching properties

中图分类号:

李豪, 耿永友, 吴谊群. AgInSbTe相变薄膜的热刻蚀腐蚀特性[J]. 无机材料学报, 2012, 27(6): 620-626.

LI Hao, GENG Yong-You, WU Yi-Qun. Thermal Etching Characteristics of AgInSbTe Phase Change Film[J]. Journal of Inorganic Materials, 2012, 27(6): 620-626.

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AgInSbTe相变薄膜的热刻蚀腐蚀特性

Thermal Etching Characteristics of AgInSbTe Phase Change Film

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