MTS/H2体系CVD SiC的气相分析

doi:10.3724/SP.J.1077.2010.00845

无机材料学报 ›› 2010, Vol. 25 ›› Issue (8): 845-850.DOI: 10.3724/SP.J.1077.2010.00845 CSTR: 32189.14.SP.J.1077.2010.00845

MTS/H₂体系CVD SiC的气相分析

卢翠英^{1, 2}, 成来飞², 赵春年², 张立同²

(1. 榆林学院化学与化工学院, 榆林 719000; 2. 西北工业大学超高温结构复合材料国防科技重点实验室, 西安 710072)

收稿日期:2009-11-25 修回日期:2010-03-15 出版日期:2010-08-20 网络出版日期:2010-07-19
基金资助:
国家重点基础研究发展计划(973) (50820145202)

Analysis of Gaseous Species in Chemical Vapor Deposition of SiC from MTS/H₂

LU Cui-Ying^1,2, CHENG Lai-Fei², ZHAO Chun-Nian², ZHANG Li-Tong²

(1. School of chemistry and chemical engineering, Yulin University, Yulin 719000, China; 2. National Key Laboratory of Thermostructure Composite Materials, Northwestern Polytechnical University, Xi’an 710072, China)

Received:2009-11-25 Revised:2010-03-15 Published:2010-08-20 Online:2010-07-19

摘要/Abstract

摘要：

采用CG/MS定性定量分析了MTS/H₂体系CVD SiC的气相组成, 考察了沉积温度、总压和流量对气相组成的影响, 从反应速率和分子浓度大小的角度出发, 分析了MTS在H2中的分解步骤. 主要结论如下: (1) 检测到CH₄、C₂H₆、C₂H₄、C₃H₆、C₂H₂、MTS、SiCl₄和CH₃SiHCl₂物质, 其中CH₄和SiCl₄的含量较高. (2) 体系温度、总压和总流量对气相组成有显著影响, 其影响规律与热力分析结果一致. (3) MTS主要以Si-C键断裂引发分解反应, 经历与原反应气反应、中间物质和副产物生成等主要阶段, CH₃®C₂H₆®C₂H₄®C₂H₂是生成烷烃化合物的主要路径.

关键词: GC/MS, 气相分析, CVD SiC, MTS/H₂

Abstract:

Qualitative and quantitative analyses were carried out to investigate the effect of the deposition temperature, pressure and flow rate of chemical vapor deposition imposed on the concentrations of MTS/H₂CVD SiC gaseous species through GC/MS method. Decomposition procedures of MTS in H₂ based on the reaction rate and concentrations of species were analyzed. The results show that: (1) the identified gaseous species are CH4、C₂H₆、C₂H₄, C₃H₆, C₂H₂, MTS, SiCl₄ and CH₃SiHCl₂, of which the concentrations of CH₄and SiCl₄are comparatively higher; (2) temperature, pressure and flow rate have great effect on the concentrations of gaseous species, and their regular patterns follow the same dependence as the thermodynamics; (3) MTS mainly starts with the cracking and decomposition of Si-C, and experiences three stages, the reaction with H₂, the formation of middle objects and also by-products. It is suggested that the main formation route of alkane is CH₃®C₂H₆®C₂H₄®C₂H₂.

Key words: GC/MS, analysis of gaseous species, CVD SiC, MTS/H₂

中图分类号:

O657

卢翠英, 成来飞, 赵春年, 张立同. MTS/H₂体系CVD SiC的气相分析[J]. 无机材料学报, 2010, 25(8): 845-850.

LU Cui-Ying, CHENG Lai-Fei, ZHAO Chun-Nian, ZHANG Li-Tong. Analysis of Gaseous Species in Chemical Vapor Deposition of SiC from MTS/H₂[J]. Journal of Inorganic Materials, 2010, 25(8): 845-850.

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MTS/H₂体系CVD SiC的气相分析

Analysis of Gaseous Species in Chemical Vapor Deposition of SiC from MTS/H₂

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