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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

ZrO2掺杂对SnO2薄膜电性及气敏性的影响

方国家; 刘祖黎; 张杰1; 姚凯伦2,3   

  1. 华中理工大学物理系; 武汉430074; 1华中理工大学材料科学系市武汉 430074; 2中科院国际材料物理中心; 沈阳110015; 3中国高等科技中心（世界实验室）; 北京100080;
  • 收稿日期:1995-12-25 修回日期:1996-02-12 出版日期:1997-02-20 网络出版日期:1997-02-20

Effect of ZrO2 Dopant on the Electrical and Gas Sensing Properties of SnO2 Thin Films Prepared by the Sol-Gel Technique

FANG Guojia; LIU Zuli; ZHANG Jie1; YAO Kailun2,3   

  1. Department of Physics; Huazhong Univ. of Sci.Tech. Wuhan 430074 China; 1Department ofMaterials Science; Huazhong Univ. of Sci.Tech. Wuhan 130074 China; 2International Center for Material Physics; Academic Sinica Shenyang 110015 China; 3CCAST(World Lab.), P.O. Box 8730 Beijing 100080 China
  • Received:1995-12-25 Revised:1996-02-12 Published:1997-02-20 Online:1997-02-20

PDF (PC)

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摘要： 本研究不用金属酸盐而以无机盐SnCl2·2H2O为主体原料;以Zr（OC3H7）4为掺杂剂;无水乙醇为溶剂，采用溶胶-疑胶（Sol－Gel）工艺制备了不同ZrO2掺杂份量的SnO2薄膜.发现ZrO2掺杂的SnO2薄膜在常温下对H2S气体具有较好的气敏性能.同时本文研究了ZrO2掺杂份量对SnO2薄膜导电率及气敏性能的影响.

关键词: SnO2薄膜, Slo－Gel工艺, ZrO2掺杂份量, 电学及气敏性能

Abstract: SnO2(ZrO2) thin films with different dopant concentrations were deposited on soda-glass sheets by the Sol-Gel technique, using non-alkoxide SnCl2.2H2O as main precursor, Zr(OC3H7)4 as dopant, ethanol as solvent. The effect of ZrO2 dopant concentration on the efectrical and gas sensing was studicd. We found that the ZrO2-SnO2 thin films prepared by this method havc very good gas sensitivity, excellent selectivity, rapid rcspionse and recovery behaviour to H2S at room temperature

Key words: ZrO2 doped SnO2 thin films, Sol-Gel technique, ZrO2 dopant concentration, electrical and gas sensing properties