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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

低温烧结SrTiO3晶界层电容器材料的体深能级的研究

李峥; 王评初; 徐保民; 殷之文   

  1. 中国科学院上海硅酸盐研究所; 上海 200050
  • 收稿日期:1997-07-10 修回日期:1900-01-01 出版日期:1998-04-20 网络出版日期:1998-04-20

Study of Deep Bulk Traps of Low-Temperature-Sintered SrTiO3 GBBL Capacitors

LI Zheng; WANG Ping-Chu; XU Bac--Min; YIN Zhi-Wen   

  1. Shanghai Institute of Ceramics; Chinese Academy of Sciences Shanghai 200050 China
  • Received:1997-07-10 Revised:1900-01-01 Published:1998-04-20 Online:1998-04-20

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摘要： 本文用导纳谱法测得低温一次烧结SrTiO3晶界层电容器材料的体深能级位于导带底下0.21eV处．提出了SrTiO3顺电行为和体深能级综合效应对材料介电性质的作用，解释了材料ε～T曲线上的异常“凸起”和显著的介电频散现象．根据给出的合体深能级的等效电路模型，计算机拟合结果与实验数据基本相符．

关键词: 钛酸锶, 晶界层电容器, 介电性质, 体深能级

Abstract: A deep bulk trap level of SrTiO3 grain boundary barrier layer (GBBL) capacitor material was found to be at about 0.21eV below its
conduction band by means of admittance spectroscopy. With temperature increasing from --150 to 10℃, the εeff protrusion and then the conspicuous dispersity of dielectric constant
were observed and explained. In terms of a combination of paraelectric behaviour of SrTiO3 and a deep bulk trap effect, an equivalent circuit model involving the
deep bulk level was given. Based on the model, a reasonable cosistency of calculated dielctric constants with experimental data was revealed.

Key words: SrTiO3, GBBL capacitor, dielectric constant, deep bulk trap

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