无机材料学报

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固相法制备低温烧结B2O3-P2O5-SiO2系低介陶瓷材料

李勃; 岳振星; 周济; 桂治轮; 李龙土   

  1. 清华大学材料系新型陶瓷与精细工艺国家重点实验室 北京 100084
  • 收稿日期:2000-09-11 修回日期:2000-10-18 出版日期:2001-09-20 网络出版日期:2001-09-20

Low Dielectric Constant B2O3-P2O5-SiO2 Ceramics Derived from Mixed-Solid Process

LI Bo; YUE Zhen-Xing; ZHOU Ji; GUI Zhi-Lun; LI Long-Tu   

  1. State Key Lab of New Ceramics and Fine Processing; Dept. of Materials Science and Engineering; Tsinghua University; Beijing 100084; China
  • Received:2000-09-11 Revised:2000-10-18 Published:2001-09-20 Online:2001-09-20

摘要: 采用传统的电子陶瓷生产工艺,制备出一种B-P-SiO系瓷料.该体系材料加入少量助烧剂可在900℃,空气气氛中烧结,获得低介电常数陶瓷.得到烧结体的介电常数ε≤5、介电损耗tanδ≤3×10-3(1MHz);有望用于超高频叠层片式电感领域.

关键词: 低介电常数, 低烧结温度, 片式电感

Abstract: A novel B2O3-P2O5-SiO2 ceramic was synthesized by the conventional mixed-solid method using PbF2 as a low melting point additive. The low dielectric ceramic can be sintered below 900℃ in air. The typical dielectric properties of the sintered ceramics derived from the mixed-solid method show as: dielectric constants below 5, and dielectric loss less than 3×10-3 at the frequency of 1MHz. The ceramics are potential for using as dielectric material in super high frequency multi-layer chip inductors.

Key words: low dielectric constant, low sintering temperature, multi-layer chip inductors

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