[1] Robert F. Science, 1997, 276: 895--896. [2] Tsukazaki A, Ohtomo A, Onuma T, et al. Nature Material, 2005, 4: 42--46. [3] Nause J, Nemeth B. Semicond. Sci. Technol., 2005, 20: S45--S48. [4] Ohshimaa E, Oginoa H, Niikura I, et al. J. Crys. Grow., 2004, 260: 166--170. [5] Maeda K, Sato M, Niikura I. Semicond. Sci. Technol., 2005, 20: S49--S54. [6] Hassani S, Tromson-Carij A, Lusson A, et al. Phys. Stat. Sol. (b), 2002, 229: 835--839. [7] Grasza K, Mcelelskl A. Phys. Stat. Sol. (c), 2005, 2: 1115--1118. [8] Look D C, Reynolds D C, Sizelove J R, et al. Solid State Communication, 1998, 105: 399--401. [9] Li Xin-Hua, Xu Jia-Yue, Li Xiao-Min. Applied Physics A, 2005, 82: 373--376. [10] Zhao Y, Dong Z, Wei X, et al. Chinese Journal of Semiconductors, 2006, 27: 336--339. [11] Song C, Hang Y, Zhang C, XU J, et al. Journal of Synthetic Crystals, 2005, 34: 1083--1087. [12] Tena-Zaera R, Mart\acute inez-Tom\acute as M C, Hassani S, et al. J. Crys. Growth, 2004, 270: 711--721. [13] Fujimura N, Nishihara T, Goto S, et al. J. Cryst. Growth, 1993, 130: 269--272. [14] Fan H J, Scholz R, Kolb M F, et al. Appl. Phys. A, 2004, 79: 1895--1900. [15] Yang L W, Wu X L, Huang G S, et al. J. Appl. Phys., 2005, 97: 014308. [16] Ozgǖr U, Alivov Y I, Liu C, et al. J. Appl. Phys., 2005, 98: 041301. [17] Mo C M, Li Y H, Lin Y S, et al. J. Appl. Phys., 1998, 83: 4389--4391. [18] Lin G, Yang S H, Yang C L, et al. Appl. Phys. Lett., 2000, 76: 2901--2903. [19] 高相东, 李效民, 于伟东(Gao Xiang-Dong, et al). 无机材料学报(Journal of Inorganic Materials), 2005, 20 (4): 965--970. [20] Vanheusden K, Seager C H, Warren W L, et al. J. Appl. Phys., 1996, 79: 7983--7990. [21] Van Dijken A, Meulenkamp E A, Vanmaekelbergh D, et al. J. Phys. Chem. B, 2000, 104: 1715--1723. [22] Kroger F A. The Chemistry of Imperfect Crystals. Amsterdam: North-Holland Publishing Company, 1964. 691. [23] Studenikin S A, Golego N, Cocivra M. J. Appl. Phys., 1998, 84: 2287--2294. [24] Minamit, Nanto H, Takata S. Thin Solid Films, 1983, 109: 379--384. |