无机材料学报 ›› 2021, Vol. 36 ›› Issue (1): 43-48.DOI: 10.15541/jim20200088

• 研究论文 • 上一篇    下一篇

Ti 4+掺杂M型六角铁氧体BaFe12-xTixO19陶瓷的磁学和介电特性

柏嘉玮1,杨静1(),吕桢飞1,唐晓东1,2()   

  1. 华东师范大学 1. 物理与电子科学学院, 电子科学系
    2. 极化材料与器件教育部重点实验室, 上海 200241
  • 收稿日期:2020-02-24 修回日期:2020-04-27 出版日期:2021-01-20 发布日期:2020-07-21
  • 作者简介:柏嘉玮(1992-), 男, 博士研究生. E-mail: bai_jiawei@163.com
  • 基金资助:
    国家自然科学基金(61574058);国家自然科学基金(61674058)

Magnetic and Dielectric Properties of Ti 4+-doped M-type Hexaferrite BaFe12-xTixO19 Ceramics

BAI Jiawei1,YANG Jing1(),LÜ Zhenfei1,TANG Xiaodong1,2()   

  1. 1. Department of Electronic Science, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
    2. Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China
  • Received:2020-02-24 Revised:2020-04-27 Online:2021-01-20 Published:2020-07-21
  • About author:BAI Jiawei(1992-), male, PhD candidate. E-mail: bai_jiawei@163.com
  • Supported by:
    National Natural Science Foundation of China(61574058);National Natural Science Foundation of China(61674058)

摘要:

六角铁氧体由于其具备高温下的低场磁电耦合特性, 有望应用于新型多态存储器及磁电传感器等微电子器件。利用Ti 4+离子对M型六角铁氧体BaFe12O19进行B位掺杂, 不仅可以调控材料的磁结构和磁学特性, 同时, Ti离子在六角铁氧体B位的不等价掺杂还可以产生相关缺陷、载流子和变价Fe离子进而改变其电学特性。本研究采用固相烧结法制备了M型六角铁氧体BaFe12-xTixO19 (x=0, 0.5, 1, 1.5)陶瓷, 并对其进行了性能表征和测试, 研究了B位Ti 4+掺杂对材料结构、磁学和介电特性的影响。研究结果表明, BaFe12-xTixO19呈现上、下自旋反平行的亚铁磁序。当Ti 4+离子掺杂量较低时, 更易取代位于上自旋格子的Fe 3+离子, 其磁化强度随Ti掺杂量的增加而减小; 随着Ti 4+离子掺杂量的进一步增加, 位于下自旋格子的Fe 3+离子也会逐渐被取代, 此时, 饱和磁化强度随掺杂量的增加而增加。此外, Ti 4+离子的引入也会使晶粒内部呈现半导性, 在晶粒/晶界处产生Maxwell-Wagner界面极化, 故而M型六角铁氧体BaFe12-xTixO19陶瓷会出现明显的低频介电增强并伴随着Maxwell-Wagner介电弛豫。

关键词: B位离子掺杂, M型六角铁氧体, 磁学特性, 介电特性

Abstract:

Hexaferrite system is expected to be applied in various kinds of multi-state memories, magnetoelectric sensors and other new microelectronic devices, due to its high temperature magnetoelectric coupling effect with low field. Not only the B-site doping of M-type hexaferrite BaFe12O19 with Ti 4+ ion can change its magnetic structure and magnetic properties, but also the defects, multivalent Fe ions, introduced by B-site non-epuivalent Ti doping, could affect its electric properties. In this study, M-type hexaferrite BaFe12-xTixO19 (x=0, 0.5, 1, 1.5) ceramics were prepared by solid phase sintering. The effects of Ti 4+ doping on the structural, magnetic and dielectric properties were studied. The results show that BaFe12-xTixO19 is in ferrimagnetic order with antiparallel spins. When the doping concentration of Ti 4+ ions is low, it tends to replace Fe 3+ ions with up-spin. And the magnetization decreases with the increase of Ti dopant. However, with the further increase of Ti 4+ doping, Fe 3+ ions with down-spin is also replaced, and the saturation magnetization increases with the increase of x. The introduction of Ti 4+ ions can also make the grains to be semiconductor, which results in the Maxwell-Wagner interface polarization behavior at the interfaces between semiconducting grains and grain-boundaries. Hence, M-type hexaferrite BaFe12-xTixO19 ceramics appear obvious low frequency dielectric enhancement accompanied by a Maxwell-Wagner dielectric relaxation.

Key words: B-site doping, M-type hexaferrite, magnetic property, dielectric property

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