等离子体增强原子层沉积AlN外延单晶GaN研究
Epitaxy Single Crystal GaN on AlN Prepared by Plasma-enhanced Atomic Layer Deposition
(a) (002); (b) (102)
等离子体增强原子层沉积AlN外延单晶GaN研究 |
| 卢灏, 许晟瑞, 黄永, 陈兴, 徐爽, 刘旭, 王心颢, 高源, 张雅超, 段小玲, 张进成, 郝跃 |
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Epitaxy Single Crystal GaN on AlN Prepared by Plasma-enhanced Atomic Layer Deposition |
| LU Hao, XU Shengrui, HUANG Yong, CHEN Xing, XU Shuang, LIU Xu, WANG Xinhao, GAO Yuan, ZHANG Yachao, DUAN Xiaoling, ZHANG Jincheng, HAO Yue |
| 图9 样品b不同晶面的摇摆曲线 |
| Fig. 9 Rocking curves of sample b on different crystal planes (a) (002); (b) (102) |
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