等离子体增强原子层沉积AlN外延单晶GaN研究
卢灏1,2(
), 许晟瑞1(), 黄永2, 陈兴2, 徐爽1, 刘旭1, 王心颢1, 高源1, 张雅超1, 段小玲1, 张进成1, 郝跃1
), 许晟瑞1(), 黄永2, 陈兴2, 徐爽1, 刘旭1, 王心颢1, 高源1, 张雅超1, 段小玲1, 张进成1, 郝跃1
Epitaxy Single Crystal GaN on AlN Prepared by Plasma-enhanced Atomic Layer Deposition
LU Hao1,2(), XU Shengrui1(), HUANG Yong2, CHEN Xing2, XU Shuang1, LIU Xu1, WANG Xinhao1, GAO Yuan1, ZHANG Yachao1, DUAN Xiaoling1, ZHANG Jincheng1, HAO Yue1
), XU Shengrui1(), HUANG Yong2, CHEN Xing2, XU Shuang1, LIU Xu1, WANG Xinhao1, GAO Yuan1, ZHANG Yachao1, DUAN Xiaoling1, ZHANG Jincheng1, HAO Yue1
图1. PEALD工艺制备AlN的示意图
Fig. 1. Schematic diagram of plasma-enhanced atomic layer deposition (PEALD) process of AlN
