第三代半导体互连材料与低温烧结纳米铜材的研究进展
柯鑫1,2(
), 谢炳卿1,2, 王忠1,3(), 张敬国1,3,4, 王建伟1,3, 李占荣1,3,4, 贺会军1,3, 汪礼敏1,3
), 谢炳卿1,2, 王忠1,3(), 张敬国1,3,4, 王建伟1,3, 李占荣1,3,4, 贺会军1,3, 汪礼敏1,3
Progress of Interconnect Materials in the Third-generation Semiconductor and Their Low-temperature Sintering of Copper Nanoparticles
KE Xin1,2(), XIE Bingqing1,2, WANG Zhong1,3(), ZHANG Jingguo1,3,4, WANG Jianwei1,3, LI Zhanrong1,3,4, HE Huijun1,3, WANG Limin1,3
), XIE Bingqing1,2, WANG Zhong1,3(), ZHANG Jingguo1,3,4, WANG Jianwei1,3, LI Zhanrong1,3,4, HE Huijun1,3, WANG Limin1,3
图5. TLP键合时的虚拟平衡相图[
Fig. 5. Virtual equilibrium phase diagram for TLP bonding[
