第三代半导体互连材料与低温烧结纳米铜材的研究进展
Progress of Interconnect Materials in the Third-generation Semiconductor and Their Low-temperature Sintering of Copper Nanoparticles
(a, b) 200 ℃; (c, d) 225 ℃; (e, f) 250 ℃; (g, h) 275 ℃
第三代半导体互连材料与低温烧结纳米铜材的研究进展 |
| 柯鑫, 谢炳卿, 王忠, 张敬国, 王建伟, 李占荣, 贺会军, 汪礼敏 |
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Progress of Interconnect Materials in the Third-generation Semiconductor and Their Low-temperature Sintering of Copper Nanoparticles |
| KE Xin, XIE Bingqing, WANG Zhong, ZHANG Jingguo, WANG Jianwei, LI Zhanrong, HE Huijun, WANG Limin |
| 图13 在不同温度下烧结试样的截面SEM照片[ |
| Fig. 13 SEM images of cross sections of sintered specimens at different temperatures[ (a, b) 200 ℃; (c, d) 225 ℃; (e, f) 250 ℃; (g, h) 275 ℃ |
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