溶液法制备AgBi2I7薄膜及其光电探测性能研究
胡盈1(
), 李自清2(), 方晓生1,2()
), 李自清2(), 方晓生1,2()
Solution-prepared AgBi2I7 Thin Films and Their Photodetecting Properties
HU Ying1(), LI Ziqing2(), FANG Xiaosheng1,2()
), LI Ziqing2(), FANG Xiaosheng1,2()
图6. AgBi2I7/GaN异质结的结构与光电特性
Fig. 6. Device structure and photoelectric properties of AgBi2I7/GaN heterojunctions
(a) Device structure; (b) Energy diagram; (c) I-V curves; (d) I-t curves to 350 nm UV light; (e) Responsivity and detectivity; (f) Performance comparison of lead-free photodetectors
Colorful figures are available on website
