溶液法制备AgBi2I7薄膜及其光电探测性能研究

胡盈, 李自清, 方晓生

Solution-prepared AgBi2I7 Thin Films and Their Photodetecting Properties

HU Ying, LI Ziqing, FANG Xiaosheng

图6 AgBi2I7/GaN异质结的结构与光电特性

Fig. 6 Device structure and photoelectric properties of AgBi2I7/GaN heterojunctions (a) Device structure; (b) Energy diagram; (c) I-V curves; (d) I-t curves to 350 nm UV light; (e) Responsivity and detectivity; (f) Performance comparison of lead-free photodetectors Colorful figures are available on website