溶液法制备AgBi2I7薄膜及其光电探测性能研究
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胡盈, 李自清, 方晓生
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Solution-prepared AgBi2I7 Thin Films and Their Photodetecting Properties
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HU Ying, LI Ziqing, FANG Xiaosheng
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表S1 典型无铅钙钛矿光电探测器光电性能总结
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Table S1 Summary of optoelectronic performances of typical lead-free perovskite photodetectors
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Photodetector | Light/nm | On/Off ratio | Responsivity/(A·W-1) | Detectivity /Jones | Ref. | Ag-AgBi2I7-GaN-Ag | 350 | 8.7×105 | 27.51 | 1.53×1014 | This work | Graphene-Cs3Bi2I9-p-Si | 650 | >102 | 23.6 | 1.75×1013 | [1] | In-GaN-Cs2AgBiBr6-NiO-Au | 365 | 1.16×103 | 0.33 | 3.28×1011 | [2] | ITO-SnO2-CsBi3I10-Au | 650 | 2.33×105 | 0.2 | 1.8×1013 | [3] | Graphene-CsSnI3-SnO2-ITO | 405 | 104 | 0.237 | 1.18×1012 | [4] | FTO-SnO2-Ag2BiI5-carbon | 473 | 6.25×105 | 0.3 | 5.3×1012 | [5] | ITO-SnO2-Cs3Bi2I9-PTAA-Au-ITO | 405 | 5.7×103 | 0.052 | >1012 | [6] | Au-CsCu2I3/GaN-In | 325 | 1.1×104 | 0.37 | 1.83×1013 | [7] | Au-Cs3Sb2I9-Au | 450 | 5.5×103 | 0.446 | 1.27 × 1011 | [8] |
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