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柔性压电器件及其可穿戴应用
冒爱琴1(), 陆文宇1, 贾洋刚1, 王冉冉2,3(), 孙静2
Flexible Piezoelectric Devices and Their Wearable Applications
MAO Aiqin1(), LU Wenyu1, JIA Yanggang1, WANG Ranran2,3(), SUN Jing2

图4. 化学掺杂与结构改善[84-85,87 -88]

Fig. 4. Chemical doping and structural improvement[84-85,87 -88]
(a) Tb-doped ZnO[84]; (b) Output of modified ZnO with different concentrations[84]; (c) Effect of doping with different halogen elements on ZnO[85]; (d) Effect of doping with different halogen elements on the piezoelectric output of ZnO[85]; (e) Schematic diagram of the GAMF device[87]; (f) Piezoelectric active layers with different structures[88] (1 kgf=9.8 N)