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柔性压电器件及其可穿戴应用
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冒爱琴 1(  ), 陆文宇 1, 贾洋刚 1, 王冉冉 2,3(  ), 孙静 2
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Flexible Piezoelectric Devices and Their Wearable Applications
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MAO Aiqin 1(  ), LU Wenyu 1, JIA Yanggang 1, WANG Ranran 2,3(  ), SUN Jing 2
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图4. 化学掺杂与结构改善[84-85,87 -88]
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Fig. 4. Chemical doping and structural improvement[84-85,87 -88] (a) Tb-doped ZnO[84]; (b) Output of modified ZnO with different concentrations[84]; (c) Effect of doping with different halogen elements on ZnO[85]; (d) Effect of doping with different halogen elements on the piezoelectric output of ZnO[85]; (e) Schematic diagram of the GAMF device[87]; (f) Piezoelectric active layers with different structures[88] (1 kgf=9.8 N)
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