基于Al2O3/Chitosan叠层栅介质的双栅IGZO神经形态晶体管
王靖瑜1(
), 万昌锦1, 万青1,2()
), 万昌锦1, 万青1,2()
Dual-gate IGZO-based Neuromorphic Transistors with Stacked Al2O3/Chitosan Gate Dielectrics
WANG Jingyu1(), WAN Changjin1, WAN Qing1,2()
), WAN Changjin1, WAN Qing1,2()
图6. 叠层Al2O3/壳聚糖栅介质晶体管的(a)八个连续电脉冲(0.5 V, 25 ms)激发的多脉冲易化现象和(b) A8/A1的比值与脉冲时间间隔的关系图
Fig. 6. (a) Multi-pulse facilitation induced by eight successive electric pulse (0.5 V, 25 ms) and (b) ratio of A8/A1 plotted as a function of the time interval between the pulses for IGZO-based dual-gate transistor with stacked Al2O3/chitosan gate dielectrics
