基于Al2O3/Chitosan叠层栅介质的双栅IGZO神经形态晶体管
王靖瑜1(
), 万昌锦1, 万青1,2()
), 万昌锦1, 万青1,2()
Dual-gate IGZO-based Neuromorphic Transistors with Stacked Al2O3/Chitosan Gate Dielectrics
WANG Jingyu1(), WAN Changjin1, WAN Qing1,2()
), WAN Changjin1, WAN Qing1,2()
图5. (a) 生物突触结构示意图以及叠层Al2O3/壳聚糖栅介质突触晶体管的等效电路图, (b) 0.5 V, 20 ms电脉冲下的两组器件的EPSC响应, (c) 叠层Al2O3/壳聚糖栅介质晶体管在不同振幅的电脉冲诱发的EPSC
Fig. 5. (a) Schematic diagram of biological synapse and their equivalent electrical circuit of the neuromorphic transistor, (b) EPSC responses under an electric pulse of 0.5 V, and (c) EPSC induced by electric pulses of different amplitudes for IGZO-based dual-gate transistor with stacked Al2O3/chitosan gate dielectrics
