基于Al2O3/Chitosan叠层栅介质的双栅IGZO神经形态晶体管
王靖瑜1(
), 万昌锦1, 万青1,2()
), 万昌锦1, 万青1,2()
Dual-gate IGZO-based Neuromorphic Transistors with Stacked Al2O3/Chitosan Gate Dielectrics
WANG Jingyu1(), WAN Changjin1, WAN Qing1,2()
), WAN Changjin1, WAN Qing1,2()
图4. 晶体管的顶部光学显微镜照片(a), 在不同VG2下(范围为-2.0 V至1.0 V)的晶体管转移曲线(b)及不同VG2下的器件阈值电压变化(c)
Fig. 4. (a) Top micrograph, (b) transfer characteristics with different VG2 (from-2.0 V to 1.0 V) and (c) the Vth with different VG2 of transistor
