基于Al2O3/Chitosan叠层栅介质的双栅IGZO神经形态晶体管
王靖瑜1(
), 万昌锦1, 万青1,2()
), 万昌锦1, 万青1,2()
Dual-gate IGZO-based Neuromorphic Transistors with Stacked Al2O3/Chitosan Gate Dielectrics
WANG Jingyu1(), WAN Changjin1, WAN Qing1,2()
), WAN Changjin1, WAN Qing1,2()
图3. 两组不同结构IGZO晶体管的转移曲线和输出曲线
Fig. 3. Transfer characteristics and output characteristics of two kinds of dielectric devices
(a,b) Transfer characteristics of chitosan dielectric device (a) and stacked Al2O3/chitosan bilayer gate dielectric device (b); (c) Output characteristic of chitosan dielectric device; (d) Output characteristic of stacked Al2O3/chitosan bilayer gate dielectric device
