基于Al2O3/Chitosan叠层栅介质的双栅IGZO神经形态晶体管
王靖瑜1(
), 万昌锦1, 万青1,2()
), 万昌锦1, 万青1,2()
Dual-gate IGZO-based Neuromorphic Transistors with Stacked Al2O3/Chitosan Gate Dielectrics
WANG Jingyu1(), WAN Changjin1, WAN Qing1,2()
), WAN Changjin1, WAN Qing1,2()
图2. 单层、双层栅介质的漏电流曲线及其AFM形貌(插图)
Fig. 2. Leakage current curves and corresponding AFM images (inset) of monolayer gate dielectric and bilayer gate dielectric
(a) Chitosan solid dielectric; (b) Stacked Al2O3/chitosan bilayer gate dielectric (Inset: AFM image of Al2O3 membrane)
