基于Al2O3/Chitosan叠层栅介质的双栅IGZO神经形态晶体管

王靖瑜, 万昌锦, 万青

Dual-gate IGZO-based Neuromorphic Transistors with Stacked Al2O3/Chitosan Gate Dielectrics

WANG Jingyu, WAN Changjin, WAN Qing

表2 不同结构的人工突触晶体管的EPSC能耗对比

Table 2 Energy consumption of the single EPSC peak in different artificial synaptic transistors

Structure VDS/V VG pulse EPSC/nA Energy consumption/(pJ·spike-1) Ref. Nanogranular SiO2/IZO 1.0 0.8 V, 20 ms 5000 105 [33] GO+Chitosan/IGZO 0.1 0.5 V, 20 ms 14 28 [34] Carbon Nanotube (CNT) 0.5 4.0 V, 1.0 ms 15 7.5 [35] Chitosan/IZO 0.1 0.5 V, 25 ms 2.6 6.5 [36] Chitosan/IWO 0.1 0.2 V, 20 ms 4.7 9.4 [37] Chitosan/IGZO 0.1 0.5 V, 20 ms 26 52 [38] Tungsten oxide 0.3 0.6 V, 70 ms 3.8 79 [39] Chitosan/ IGZO 0.1 0.5 V, 20 ms 24 48 This work Chitosan/Al2O3/IGZO 0.1 0.5 V, 20 ms 0.86 1.7 This work