基于Al2O3/Chitosan叠层栅介质的双栅IGZO神经形态晶体管

王靖瑜, 万昌锦, 万青

Dual-gate IGZO-based Neuromorphic Transistors with Stacked Al2O3/Chitosan Gate Dielectrics

WANG Jingyu, WAN Changjin, WAN Qing

表1 两组IGZO神经形态晶体管的晶体管参数对比

Table 1 Transistor parameters of IGZO-based transistors

Gate dielectric Ioff Ion/Ioff ratio Subthreshold swing/ (mV·decade-1) Hysteresis window/V Leakage current (VG=1.8 V)/nA μsat/ (cm2·V-1·s-1) Chitosan 2.92×10-9 1.06×105 98.8 1.10 66.4 18.0 Chitosan/Al2O3 4.20×10-11 2.20×106 78.3 3.73 1.3 20.9