本征可拉伸阈值型忆阻器及其神经元仿生特性
田雨1,2(
), 朱小健2(), 孙翠2, 叶晓羽2, 刘慧媛2, 李润伟2
), 朱小健2(), 孙翠2, 叶晓羽2, 刘慧媛2, 李润伟2
Intrinsically Stretchable Threshold Switching Memristor for Artificial Neuron Implementations
TIAN Yu1,2(), ZHU Xiaojian2(), SUN Cui2, YE Xiaoyu2, LIU Huiyuan2, LI Runwei2
), ZHU Xiaojian2(), SUN Cui2, YE Xiaoyu2, LIU Huiyuan2, LI Runwei2
图6. 拉伸应变条件下液态金属/银纳米线-聚氨酯复合薄膜/液态金属器件的阈值转变电压研究
Fig. 6. Threshold switching voltages of the Cu@GaIn/AgNWs-PU/Cu@GaIn device under different tensile strain conditions
(a) Schematics of the device stretching under tensile strain; (b) Optical images of the device before and after being stretched by 20%; (c, d) Evolution of the operation voltage for the device with tensile strain in (c) x and (d) y directions
