本征可拉伸阈值型忆阻器及其神经元仿生特性
田雨1,2(
), 朱小健2(), 孙翠2, 叶晓羽2, 刘慧媛2, 李润伟2
), 朱小健2(), 孙翠2, 叶晓羽2, 刘慧媛2, 李润伟2
Intrinsically Stretchable Threshold Switching Memristor for Artificial Neuron Implementations
TIAN Yu1,2(), ZHU Xiaojian2(), SUN Cui2, YE Xiaoyu2, LIU Huiyuan2, LI Runwei2
), ZHU Xiaojian2(), SUN Cui2, YE Xiaoyu2, LIU Huiyuan2, LI Runwei2
图5. 输入脉冲幅值、间隔对阈值型忆阻人工神经元整合发放功能的影响
Fig. 5. Influences of the voltage pulse amplitude and interval on the integrate-and-fire behaviors of the memristor based artificial neuron
(a) Integrate-and-fire behaviors of the device as a function of the voltage pulse amplitude with pulse interval and width at 30 ms and 10 ms, respectively; (b) Relationship between the required pulse number for device firing (NFire) and the pulse amplitude; (c) Integrate-and-fire behaviors of the device as a function of the voltage pulse interval with pulse amplitude and width at 6 V and 10 ms, respectively; (d) Relationship between the required pulse number for device firing (NFire) and the pulse interval; Colorful figures are available on website
