本征可拉伸阈值型忆阻器及其神经元仿生特性
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田雨 1,2(  ), 朱小健 2(  ), 孙翠 2, 叶晓羽 2, 刘慧媛 2, 李润伟 2
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Intrinsically Stretchable Threshold Switching Memristor for Artificial Neuron Implementations
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TIAN Yu 1,2(  ), ZHU Xiaojian 2(  ), SUN Cui 2, YE Xiaoyu 2, LIU Huiyuan 2, LI Runwei 2
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图3. 液态金属/银纳米线-聚氨酯复合薄膜/液态金属器件的工作机制
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Fig. 3. Working mechanism of the Cu@GaIn/AgNWs-PU/Cu@GaIn device (a) Dependence of the device resistance at the LRS on the compliance currents; (b) Illustration of the dynamic Ag filament formation/rupture between AgNWs during threshold switching process
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