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本征可拉伸阈值型忆阻器及其神经元仿生特性
田雨1,2(), 朱小健2(), 孙翠2, 叶晓羽2, 刘慧媛2, 李润伟2
Intrinsically Stretchable Threshold Switching Memristor for Artificial Neuron Implementations
TIAN Yu1,2(), ZHU Xiaojian2(), SUN Cui2, YE Xiaoyu2, LIU Huiyuan2, LI Runwei2

图3. 液态金属/银纳米线-聚氨酯复合薄膜/液态金属器件的工作机制

Fig. 3. Working mechanism of the Cu@GaIn/AgNWs-PU/Cu@GaIn device
(a) Dependence of the device resistance at the LRS on the compliance currents; (b) Illustration of the dynamic Ag filament formation/rupture between AgNWs during threshold switching process