本征可拉伸阈值型忆阻器及其神经元仿生特性
田雨1,2(
), 朱小健2(), 孙翠2, 叶晓羽2, 刘慧媛2, 李润伟2
), 朱小健2(), 孙翠2, 叶晓羽2, 刘慧媛2, 李润伟2
Intrinsically Stretchable Threshold Switching Memristor for Artificial Neuron Implementations
TIAN Yu1,2(), ZHU Xiaojian2(), SUN Cui2, YE Xiaoyu2, LIU Huiyuan2, LI Runwei2
), ZHU Xiaojian2(), SUN Cui2, YE Xiaoyu2, LIU Huiyuan2, LI Runwei2
图2. 液态金属/银纳米线-聚氨酯复合薄膜/液态金属器件的I-V特性
Fig. 2. I-V characteristics of the Cu@GaIn/AgNWs-PU/Cu@GaIn device
(a) I-V curve of the Cu@GaIn/AgNWs-PU/Cu@GaIn device; (b) Cumulative distribution function of the operation voltages; (c) I-V curves of the device under different compliance currents; (d) Dependence of the operation voltage on the thickness of the AgNWs-PU film
