氧化物双介质层忆阻器的设计及应用

游钧淇, 李策, 杨栋梁, 孙林锋

Double Dielectric Layer Metal-oxide Memristor: Design and Applications

YOU Junqi, LI Ce, YANG Dongliang, SUN Linfeng

图5 基于焦耳热效应的氧化物双介质层忆阻器的机制与性能[57]

Fig. 5 Mechanism and performance of the double dielectric layer metal-oxide memristor based on Joule heating effect[57] (a) Schematic diagrams of the switching mechanism of Ta/ZrO2(Y)/Ta2O5/TiN memristor; (b) I-V characteristic of Ta/ZrO2(Y)/Ta2O5/TiN memristor with nonlinear low-resistance state