氧化物双介质层忆阻器的设计及应用
Double Dielectric Layer Metal-oxide Memristor: Design and Applications
(a, b) Schematic diagrams of the resistance switching mechanism with (a) the structure of W/AlOx/AlOy/Pt memristor[
氧化物双介质层忆阻器的设计及应用 |
| 游钧淇, 李策, 杨栋梁, 孙林锋 |
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Double Dielectric Layer Metal-oxide Memristor: Design and Applications |
| YOU Junqi, LI Ce, YANG Dongliang, SUN Linfeng |
| 图4 基于氧空位梯度的氧化物双介质层器件的两种机制和性能对比 |
| Fig. 4 Two mechanisms and characteristics comparison of the double dielectric layer metal-oxide memristor based on oxygen vacancy gradient (a, b) Schematic diagrams of the resistance switching mechanism with (a) the structure of W/AlOx/AlOy/Pt memristor[ |
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