氧化物双介质层忆阻器的设计及应用
Double Dielectric Layer Metal-oxide Memristor: Design and Applications
(a) Schematic illustration for the switching mechanism of Ag/SiO2/Ta2O5/Pt memristor; (b) I-V characteristic of Ag/SiO2/Ta2O5/Pt memristor
氧化物双介质层忆阻器的设计及应用 |
| 游钧淇, 李策, 杨栋梁, 孙林锋 |
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Double Dielectric Layer Metal-oxide Memristor: Design and Applications |
| YOU Junqi, LI Ce, YANG Dongliang, SUN Linfeng |
| 图3 基于电场局域化效应的氧化物双介质层忆阻器的机制与性能[ |
| Fig. 3 Mechanism and characteristic of the double dielectric layer metal-oxide memristor based on the localization effect of electric field[ (a) Schematic illustration for the switching mechanism of Ag/SiO2/Ta2O5/Pt memristor; (b) I-V characteristic of Ag/SiO2/Ta2O5/Pt memristor |
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