氧化物双介质层忆阻器的设计及应用

游钧淇, 李策, 杨栋梁, 孙林锋

Double Dielectric Layer Metal-oxide Memristor: Design and Applications

YOU Junqi, LI Ce, YANG Dongliang, SUN Linfeng

图2 氧化物双介质层忆阻器在构建神经网络方面的性能优势

Fig. 2 Advantages of the double dielectric layer metal-oxide memristor in building neural network (a) I-V curves of Pt/Al2O3/TaOx/Ta memristor with self-rectifying characteristic[26]; (b) Comparison of the pulse response between the HfO2 and the AlOx/HfO2-based memristor[30]